参数资料
型号: SST12LN01-QU6F
厂商: Microchip Technology
文件页数: 1/11页
文件大小: 0K
描述: IC AMP 2.4/2.5GHZ LN 6UQFN
标准包装: 3,000
频率: 2.4GHz ~ 2.5GHz
增益: 14dB
噪音数据: 1.55dB
RF 型: 802.11b/g
电源电压: 3.3V
电流 - 电源: 11mA
测试频率: 2.4GHz ~ 2.5GHz
封装/外壳: 6-UFQFN 裸露焊盘
包装: 带卷 (TR)
2.4-2.5 GHz Low-Noise Amplifier
SST12LN01
FEATURES:
SST12L012.4-2.5 GHz Low-Noise Amplifier
APPLICATIONS:
Data Sheet
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Suitable Gain:
– Typically 14 dB gain across 2.4–2.5 GHz
Low-Noise Figure:
– Typically 1.55 dB across 2.4–2.5 GHz
IIP3:
– >1dBm across 2.4–2.5 GHz
Low-Current Consumption
– 10-12 mA across 2.4–2.5 GHz
50 Ω Input/Output Matched
Packages available
– 6-contact UQFN – 3 mm x 1.6 mm
All non-Pb (lead-free) devices are RoHS compliant
? WLAN
? Bluetooth
? Wireless Network
PRODUCT DESCRIPTION
The SST12LN01 is a cost effective Low-Noise Amplifier
(LNA) which requires no external RF-matching compo-
nents. This device is based on the 0.5m GaAs PHEMT
technology, and complies with 802.11 b/g applications.
SST12LN01 provides high-performance, low-noise, and
moderate-gain operation within the 2.4–2.5 GHz frequency
band. Across this frequency band, the LNA typically pro-
vides 14 dB gain and 1.55 dB noise figure.
This LNA cell is designed with a self DC-biasing scheme,
which maintains low DC current consumption, nominally at
11 mA, during operation. Optimum performance is
achieved with only a single power supply, and no external
bias resistors or networks are required. The input and out-
put ports are single-ended 50 Ω matched. RF ports are also
DC isolated requiring no DC blocking capacitors or match-
ing components.
The SST12LN01 is offered in a 6-contact UQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
?2009 Silicon Storage Technology, Inc.
S71329-05-000 11/10
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
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