参数资料
型号: SST25VF010A-33-4C-QAE-T
厂商: Microchip Technology
文件页数: 16/28页
文件大小: 0K
描述: IC FLASH SER 1MB 33MHZ SPI 8WSON
标准包装: 2,000
系列: SST25
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 1M (128K x 8)
速度: 33MHz
接口: SPI 串行
电源电压: 2.7 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 8-WDFN 裸露焊盘
供应商设备封装: 8-WSON
包装: 带卷 (TR)
1 Mbit SPI Serial Flash
A Microchip Technology Company
SST25VF010A
Data Sheet
Write-Enable (WREN)
The Write-Enable (WREN) instruction sets the Write-Enable-Latch bit to 1 allowing Write operations to
occur. The WREN instruction must be executed prior to any Write (Program/Erase) operation. CE#
must be driven high before the WREN instruction is executed.
CE#
MODE 3
0 1 2 3 4 5 6 7
SCK
SI
SO
MODE 0
06
MSB
HIGH IMPEDANCE
1265 F12.0
Figure 12: Write Enable (WREN) Sequence
Write-Disable (WRDI)
The Write-Disable (WRDI) instruction resets the Write-Enable-Latch bit and AAI bit to 0 disabling any
new Write operations from occurring. CE# must be driven high before the WRDI instruction is exe-
cuted.
CE#
MODE 3
0 1 2 3 4 5 6 7
SCK
SI
SO
MODE 0
04
MSB
HIGH IMPEDANCE
1265 F13.0
Figure 13: Write Disable (WRDI) Sequence
Enable-Write-Status-Register (EWSR)
The Enable-Write-Status-Register (EWSR) instruction arms the Write-Status-Register (WRSR)
instruction and opens the status register for alteration. The Enable-Write-Status-Register instruction
does not have any effect and will be wasted, if it is not followed immediately by the Write-Status-Regis-
ter (WRSR) instruction. CE# must be driven low before the EWSR instruction is entered and must be
driven high before the EWSR instruction is executed.
?2011 Silicon Storage Technology, Inc.
16
S725081A
10/11
相关PDF资料
PDF描述
24FC128T-I/MF IC EEPROM 128KB 1MHZ 8DFN-S
24LC128T-I/MF IC EEPROM 128KBIT 400KHZ 8DFN
24AA128T-I/MF IC EEPROM 128KBIT 400KHZ 8DFN
24AA128-I/MF IC EEPROM 128KBIT 400KHZ 8DFN
93LC86T/SN IC EEPROM 16KBIT 3MHZ 8SOIC
相关代理商/技术参数
参数描述
SST25VF010A-33-4C-SAE 功能描述:闪存 1M (128K x 8) 33MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST25VF010A-33-4C-SAE 制造商:Microchip Technology Inc 功能描述:Flash Memory 1MBIT 33MHz SOIC-8
SST25VF010A-33-4C-SAE-T 功能描述:闪存 1M (128Kx8) 33MHz 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST25VF010A-33-4E-QAE 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:1 Mbit SPI Serial Flash
SST25VF010A-33-4E-SAE 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:1 Mbit SPI Serial Flash