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参数资料
| 型号： | SST25VF010A-33-4C-QAE |
| 厂商： | Microchip Technology |
| 文件页数： | 10/28页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 1MB 33MHZ SPI 8WSON |
| 标准包装： | 98 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 1M (128K x 8) |
| 速度： | 33MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-WSON |
| 包装： | 管件 |
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1 Mbit SPI Serial Flash
A Microchip Technology Company
SST25VF010A
Data Sheet
6. Prior to any Byte-Program, AAI-Program, Sector-Erase, Block-Erase, or Chip-Erase operation, the Write-Enable
(WREN) instruction must be executed.
7. Block addresses for: use A MS -A 15 , remaining addresses can be V IL or V IH
8. To continue programming to the next sequential address location, enter the 8-bit command, AFH,
followed by the data to be programmed.
9. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#.
10. The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in
conjunction of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR
instruction to make both instructions effective.
11. Manufacturer’s ID is read with A 0 =0, and Device ID is read with A 0 =1. All other address bits are 00H. The Manufac-
turer’s and Device ID output stream is continuous until terminated by a low to high transition on CE#
12. Device ID = 49H for SST25VF010A
Read (20 MHz)
The Read instruction outputs the data starting from the specified address location. The data output
stream is continuous through all addresses until terminated by a low to high transition on CE#. The
internal address pointer will automatically increment until the highest memory address is reached.
Once the highest memory address is reached, the address pointer will automatically increment to the
beginning (wrap-around) of the address space, i.e. for 4 Mbit density, once the data from address loca-
tion 7FFFFH had been read, the next output will be from address location 00000H.
The Read instruction is initiated by executing an 8-bit command, 03H, followed by address bits [A 23 -
A 0 ]. CE# must remain active low for the duration of the Read cycle. See Figure 4 for the Read
sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47
48
55 56
63 64
70
SCK
MODE 0
SI
03
ADD.
ADD.
ADD.
SO
MSB
MSB
HIGH IMPEDANCE
N
D OUT
N+1
D OUT
N+2
D OUT
N+3
D OUT
N+4
D OUT
MSB
1265 F04.0
Figure 4: Read Sequence
?2011 Silicon Storage Technology, Inc.
10
S725081A
10/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25VF010A-33-4C-QAE-T | 功能描述:闪存 2.7V to 3.6V 1Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF010A-33-4C-SAE | 功能描述:闪存 1M (128K x 8) 33MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF010A-33-4C-SAE | 制造商:Microchip Technology Inc 功能描述:Flash Memory 1MBIT 33MHz SOIC-8 |
| SST25VF010A-33-4C-SAE-T | 功能描述:闪存 1M (128Kx8) 33MHz 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF010A-33-4E-QAE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:1 Mbit SPI Serial Flash |
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