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参数资料
| 型号： | SST25VF020-20-4E-QA |
| 厂商： | SILICON STORAGE TECHNOLOGY INC |
| 元件分类： | PROM |
| 英文描述： | 2M X 1 FLASH 2.7V PROM, DSO8 |
| 封装： | WSON-8 |
| 文件页数： | 5/24页 |
| 文件大小： | 659K |
| 代理商： | SST25VF020-20-4E-QA |
Data Sheet
2 Mbit / 4 Mbit SPI Serial Flash
SST25VF020 / SST25VF040
13
2004 Silicon Storage Technology, Inc.
S71231-04-000
6/04
Write-Enable (WREN)
The Write-Enable (WREN) instruction sets the Write-
Enable-Latch bit to 1 allowing Write operations to occur.
The WREN instruction must be executed prior to any Write
(Program/Erase) operation. CE# must be driven high
before the WREN instruction is executed.
FIGURE 11: WRITE ENABLE (WREN) SEQUENCE
Write-Disable (WRDI)
The Write-Disable (WRDI) instruction resets the Write-
Enable-Latch bit and AAI bit to 0 disabling any new Write
operations from occurring. CE# must be driven high before
the WRDI instruction is executed.
FIGURE 12: WRITE DISABLE (WRDI) SEQUENCE
Enable-Write-Status-Register (EWSR)
The Enable-Write-Status-Register (EWSR) instruction
arms the Write-Status-Register (WRSR) instruction and
opens the status register for alteration. The Enable-Write-
Status-Register instruction does not have any effect and
will be wasted, if it is not followed immediately by the Write-
Status-Register (WRSR) instruction. CE# must be driven
low before the EWSR instruction is entered and must be
driven high before the EWSR instruction is executed.
CE#
SO
SI
SCK
01 2 3 4 5 6 7
06
HIGH IMPEDANCE
MODE 0
MODE 3
1231 F11.1
MSB
CE#
SO
SI
SCK
01 2 3 4 5 6 7
04
HIGH IMPEDANCE
MODE 0
MODE 3
1231 F12.1
MSB
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25VF020-20-4E-QAE | 功能描述:闪存 256K X 8 14 us RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF020-20-4E-S2AE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:2 Mbit / 4 Mbit SPI Serial Flash |
| SST25VF020-20-4E-SA | 功能描述:闪存 256K X 8 14 us RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF020-20-4E-SAE | 功能描述:闪存 256K X 8 14 us RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF020-20-4I-QA | 功能描述:闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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