参数资料
型号: SST25VF020-20-4I-SAE-T
厂商: Microchip Technology
文件页数: 10/27页
文件大小: 0K
描述: IC FLASH SER 2MB 20MHZ SPI 8SOIC
标准包装: 3,300
系列: SST25
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 2M (256K x 8)
速度: 20MHz
接口: SPI 串行
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOIC
包装: 带卷 (TR)
2 Mbit SPI Serial Flash
A Microchip Technology Company
SST25VF020
Not Recommended for New Designs
10. The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in
conjunction of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR
instruction to make both instructions effective.
11. Manufacturer’s ID is read with A 0 =0, and Device ID is read with A 0 =1. All other address bits are 00H. The Manufacturer’s
and Device ID output stream is continuous until terminated by a low to high transition on CE#
12. Device ID = 43H for SST25VF020
Read
The Read instruction outputs the data starting from the specified address location. The data output
stream is continuous through all addresses until terminated by a low to high transition on CE#. The
internal address pointer will automatically increment until the highest memory address is reached.
Once the highest memory address is reached, the address pointer will automatically increment to the
beginning (wrap-around) of the address space, i.e. for 2 Mbit density, once the data from address loca-
tion 3FFFFH had been read, the next output will be from address location 00000H.
The Read instruction is initiated by executing an 8-bit command, 03H, followed by address bits [A 23 -
A 0 ]. CE# must remain active low for the duration of the Read cycle. See Figure 5 for the Read
sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47
48
55 56
63 64
70
SCK
MODE 0
SI
03
ADD.
ADD.
ADD.
SO
MSB
MSB
HIGH IMPEDANCE
N
D OUT
N+1
D OUT
N+2
D OUT
N+3
D OUT
N+4
D OUT
MSB
1231 F04.1
Figure 5: Read Sequence
?2011 Silicon Storage Technology, Inc.
10
DS25078A
11/11
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