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参数资料
| 型号： | SST25VF020B-80-4C-SAE |
| 厂商： | Microchip Technology |
| 文件页数： | 10/35页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 2MB 80MHZ SPI 8SOIC |
| 标准包装： | 98 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 2M (256K x 8) |
| 速度： | 80MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
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2 Mbit SPI Serial Flash
A Microchip Technology Company
SST25VF020B
Data Sheet
Instructions
Instructions are used to read, write (Erase and Program), and configure the SST25VF020B. The
instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. Prior to execut-
ing any Byte-Program, Auto Address Increment (AAI) programming, Sector-Erase, Block-Erase, Write-
Status-Register, or Chip-Erase instructions, the Write-Enable (WREN) instruction must be executed
first. The complete list of instructions is provided in Table 6. All instructions are synchronized off a high
to low transition of CE#. Inputs will be accepted on the rising edge of SCK starting with the most signif-
icant bit. CE# must be driven low before an instruction is entered and must be driven high after the last
bit of the instruction has been shifted in (except for Read, Read-ID, and Read-Status-Register instruc-
tions). Any low to high transition on CE#, before receiving the last bit of an instruction bus cycle, will
terminate the instruction in progress and return the device to standby mode. Instruction commands
(Op Code), addresses, and data are all input from the most significant bit (MSB) first.
Table 6: Device Operation Instructions
Address
Dummy
Data
Instruction
Description
Op Code Cycle 1
Cycle(s) 2 Cycle(s) Cycle(s)
Read
High-Speed Read
Read Memory
Read Memory at higher speed
0000 0011b (03H)
0000 1011b (0BH)
3
3
0
1
1 to ?
1 to ?
4 KByte Sector-Erase 3 Erase 4 KByte of memory array
0010 0000b (20H)
3
0
0
32 KByte Block-Erase 4
Erase 32 KByte block of memory array 0101 0010b (52H)
3
0
0
64 KByte Block-Erase 5 Erase 64 KByte block of memory array 1101 1000b (D8H)
3
0
0
Chip-Erase
Erase Full Memory Array
0110 0000b (60H) or
0
0
0
1100 0111b (C7H)
Byte-Program
To Program One Data Byte
0000 0010b (02H)
3
0
1
AAI-Word-Program 6 Auto Address Increment Programming 1010 1101b (ADH)
3
0
2 to ?
RDSR 7
RDSR1
EWSR
WRSR
WREN
WRDI
RDID 8
Read-Status-Register
Read-Status-Register 1
Enable-Write-Status-Register
Write-Status-Register
Write-Enable
Write-Disable
Read-ID
0000 0101b (05H)
0011 0101b (35H)
0101b 0000b (50H)
0000 0001b (01H)
0000 0110b (06H)
0000 0100b (04H)
1001 0000b (90H) or
0
0
0
0
0
0
3
0
0
0
0
0
0
0
1 to ?
1 to ?
0
1 or 2
0
0
1 to ?
1010 1011b (ABH)
JEDEC-ID
JEDEC ID read
1001 1111b (9FH)
0
0
3 to ?
EBSY
Enable SO to output RY/BY# status 0111 0000b (70H)
0
0
0
during AAI programming
DBSY
Disable SO as RY/BY#
1000 0000b (80H)
0
0
0
status during AAI programming
T6.0
25054
1.
2.
3.
4.
5.
6.
One bus cycle is eight clock periods.
Address bits above the most significant bit of each density can be V IL or V IH .
4KByte Sector Erase addresses: use A MS -A 12, remaining addresses are don’t care but must be set either at V IL or V IH.
32KByte Block Erase addresses: use A MS -A 15, remaining addresses are don’t care but must be set either at V IL or V IH.
64KByte Block Erase addresses: use A MS -A 16, remaining addresses are don’t care but must be set either at V IL or V IH.
To continue programming to the next sequential address location, enter the 8-bit command, ADH, followed by 2 bytes of
data to be programmed. Data Byte 0 will be programmed into the initial address [A 23 -A 1 ] with A 0 =0, Data Byte 1 will be
programmed into the
initial address [A 23 -A 1 ] with A 0 =1.
7. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#.
8. Manufacturer’s ID is read with A 0 =0, and Device ID is read with A 0 =1. All other address bits are 00H. The Manufac-
turer’s ID and device ID output stream is continuous until terminated by a low-to-high transition on CE#.
?2012 Silicon Storage Technology, Inc.
10
DS25054A
01/12
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| SST25VF020B-80-4C-SAE-T | 功能描述:闪存 2.7V to 3.6V 2Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF020B-80-4I-Q3AE | 功能描述:闪存 2.7V to 3.6V 2Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF020B-80-4I-Q3AE-T | 功能描述:闪存 2.7V to 3.6V 2Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF020B-80-4I-QAE | 功能描述:闪存 2M (256Kx8) 80MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF020B-80-4I-QAE-T | 功能描述:闪存 2.7V to 3.6V 2Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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