- 您现在的位置：买卖IC网 > PDF目录4551 > SST25VF512-20-4C-SAE (Microchip Technology)IC FLASH SER 512K 20MHZ 8SOIC PDF资料下载
参数资料
| 型号： | SST25VF512-20-4C-SAE |
| 厂商： | Microchip Technology |
| 文件页数： | 9/29页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 512K 20MHZ 8SOIC |
| 特色产品： | SST Serial and Parallel Flash Memory |
| 标准包装： | 100 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 512K (64K x 8) |
| 速度： | 20MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 管件 |
| 产品目录页面： | 1452 (CN2011-ZH PDF) |
第1页第2页第3页第4页第5页第6页第7页第8页当前第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页
512 Kbit SPI Serial Flash
A Microchip Technology Company
SST25VF512
Data Sheet
Instructions
Instructions are used to Read, Write (Erase and Program), and configure the SST25VF512. The
instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. Prior to execut-
ing any Byte-Program, Auto Address Increment (AAI) programming, Sector-Erase, Block-Erase, or
Chip-Erase instructions, the Write-Enable (WREN) instruction must be executed first. The complete list
of the instructions is provided in Table 5. All instructions are synchronized off a high to low transition of
CE#. Inputs will be accepted on the rising edge of SCK starting with the most significant bit. CE# must
be driven low before an instruction is entered and must be driven high after the last bit of the instruction
has been shifted in (except for Read, Read-ID and Read-Status-Register instructions). Any low to high
transition on CE#, before receiving the last bit of an instruction bus cycle, will terminate the instruction
in progress and return the device to the standby mode. Instruction commands (Op Code), addresses,
and data are all input from the most significant bit (MSB) first.
Table 5: Device Operation Instructions 1
Bus Cycle 2
1
2
3
4
5
Cycle
Type/Operation 3,4
S IN
S OUT
S IN
S OUT
S IN
S OUT
S IN
S OUT
S IN
S OUT
Read
Sector-Erase 5,6
Block-Erase 5,7
Chip-Erase 6
Byte-Program 6
Auto Address Increment
03H
20H
52H
60H
02H
AFH
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
Hi-Z
A 23 -A 16
A 23 -A 16
A 23 -A 16
-
A 23 -A 16
A 23 -A 16
Hi-Z
Hi-Z
Hi-Z
-
Hi-Z
Hi-Z
A 15 -A 8
A 15 -A 8
A 15 -A 8
-
A 15 -A 8
A 15 -A 8
Hi-Z
Hi-Z
Hi-Z
-
Hi-Z
Hi-Z
A 7 -A 0
A 7 -A 0
A 7 -A 0
-
A 7 -A 0
A 7 -A 0
Hi-Z
Hi-Z
Hi-Z
-
Hi-Z
Hi-Z
X
-
-
-
D IN
D IN
D OUT
-
-
-
Hi-Z
Hi-Z
(AAI) Program 6,8
Read-Status-Register
05H
Hi-Z
X
D OUT
-
Note 9
-
Note 9
-
Note 9
(RDSR)
Enable-Write-Status-Reg-
50H
Hi-Z
-
-
-
-
-
-
-
-
ister (EWSR) 10
Write-Status-Register
01H
Hi-Z
Data
Hi-Z
-
-
-.
-
-
-
(WRSR) 10
Write-Enable (WREN)
Write-Disable (WRDI)
Read-ID
06H
04H
90H or
Hi-Z
Hi-Z
Hi-Z
-
-
00H
-
-
Hi-Z
-
-
00H
-
-
Hi-Z
-
-
ID
-
-
Hi-Z
-
-
X
-
-
D OUT12
ABH
Addr 11
T5.18 25076
1. A MS = Most Significant Address
A MS = A 15 for SST25VF512
Address bits above the most significant bit of each density can be V IL or V IH
2. One bus cycle is eight clock periods.
3. Operation: S IN = Serial In, S OUT = Serial Out
4. X = Dummy Input Cycles (V IL or V IH ); - = Non-Applicable Cycles (Cycles are not necessary)
5. Sector addresses: use A MS -A 12 , remaining addresses can be V IL or V IH
6. Prior to any Byte-Program, AAI-Program, Sector-Erase, Block-Erase, or Chip-Erase operation, the Write-Enable
(WREN) instruction must be executed.
7. Block addresses for: use A MS -A 15 , remaining addresses can be V IL or V IH
8. To continue programming to the next sequential address location, enter the 8-bit command, AFH,
followed by the data to be programmed.
9. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE#.
10. The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in
conjunction of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR
instruction to make both instructions effective.
?2011 Silicon Storage Technology, Inc.
9
DS25076A
10/11
相关PDF资料 |
PDF描述 |
|---|---|
| 24VL024H/MS | IC EEPROM 2KBIT 400KHZ 8MSOP |
| 93AA86B-I/SN | IC EEPROM 16KBIT 3MHZ 8SOIC |
| 93LC46B-I/ST | IC EEPROM 1KBIT 2MHZ 8TSSOP |
| 24VL025/ST | IC EEPROM 2KBIT 400KHZ 8TSSOP |
| 24VL025/MS | IC EEPROM 2KBIT 400KHZ 8MSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25VF512-20-4C-SAE_ | 制造商:Microchip Technology Inc 功能描述: |
| SST25VF512-20-4C-SAE-T | 功能描述:闪存 512K (64Kx8) 20MHz 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF512A | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit SPI Serial Flash |
| SST25VF512A-33-4C-QAE | 功能描述:闪存 512K (64K X 8) 33MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF512A-33-4C-QAE-T | 功能描述:闪存 2.7V to 3.6V 512Kbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。