- 您现在的位置：买卖IC网 > PDF目录4259 > SST25VF512A-33-4C-ZAE (Microchip Technology)IC FLASH SER 512KB 33MHZ 8CSP PDF资料下载
参数资料
| 型号： | SST25VF512A-33-4C-ZAE |
| 厂商： | Microchip Technology |
| 文件页数： | 10/28页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER 512KB 33MHZ 8CSP |
| 标准包装： | 3,000 |
| 系列： | SST25 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 512K (64K x 8) |
| 速度： | 33MHz |
| 接口： | SPI 串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-UFBGA，CSPBGA |
| 供应商设备封装： | 8-CSP |
| 包装： | 管件 |
第1页第2页第3页第4页第5页第6页第7页第8页第9页当前第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页
512 Kbit SPI Serial Flash
A Microchip Technology Company
SST25VF512A
Data Sheet
10. The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in
conjunction of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR
instruction to make both instructions effective.
11. Manufacturer’s ID is read with A 0 =0, and Device ID is read with A 0 =1. All other address bits are 00H. The Manufac-
turer’s and Device ID output stream is continuous until terminated by a low to high transition on CE#
12. Device ID = 48H for SST25VF512A
Read (20 MHz)
The Read instruction outputs the data starting from the specified address location. The data output
stream is continuous through all addresses until terminated by a low to high transition on CE#. The
internal address pointer will automatically increment until the highest memory address is reached.
Once the highest memory address is reached, the address pointer will automatically increment to the
beginning (wrap-around) of the address space, i.e. for 4 Mbit density, once the data from address loca-
tion 7FFFFH had been read, the next output will be from address location 00000H.
The Read instruction is initiated by executing an 8-bit command, 03H, followed by address bits [A 23 -
A 0 ]. CE# must remain active low for the duration of the Read cycle. See Figure 5 for the Read
sequence.
CE#
MODE 3
0 1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47
48
55 56
63 64
70
SCK
MODE 0
SI
03
ADD.
ADD.
ADD.
SO
MSB
MSB
HIGH IMPEDANCE
N
D OUT
N+1
D OUT
N+2
D OUT
N+3
D OUT
N+4
D OUT
MSB
1264 F04.0
Figure 5: Read Sequence
?2011 Silicon Storage Technology, Inc.
10
DS25090A
10/11
相关PDF资料 |
PDF描述 |
|---|---|
| SST25VF512A-33-4I-ZAE | IC FLASH SER 512KB 33MHZ 8CSP |
| CF15S | COVER FLANGE 15POS FEMALE |
| 25LC080CT-E/MNY | IC SRL EEPROM 1KX8 2.5V 8-TDFN |
| 25LC080DT-E/MNY | IC SRL EEPROM 1KX8 2.5V 8-TDFN |
| 25LC080DT-E/ST | IC SRL EEPROM 1KX8 2.5V 8-TSSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST25VF512A-33-4E-QAE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit SPI Serial Flash |
| SST25VF512A-33-4E-SAE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit SPI Serial Flash |
| SST25VF512A-33-4I-QAE | 功能描述:闪存 2.7V to 3.6V 512Kbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF512A-33-4I-QAE-T | 功能描述:闪存 2.7V to 3.6V 512Kbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST25VF512A-33-4I-SAE | 功能描述:闪存 512K (64Kx8) 33MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。