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参数资料
| 型号： | SST27SF010-70 |
| 厂商： | Silicon Storage Technology, Inc. |
| 元件分类： | 圆形连接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT07; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
| 中文描述： | 256千位/ 512千位/ 1兆位/ 2兆（× 8），许多一次性可编程闪存 |
| 文件页数： | 1/26页 |
| 文件大小： | 268K |
| 代理商： | SST27SF010-70 |
2001 Silicon Storage Technology, Inc.
S71152-02-000
5/01
1
502
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
MTP is a trademark of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.
Data Sheet
256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8)
Many-Time Programmable Flash
SST27SF256 / SST27SF512 / SST27SF010 / SST27SF020
FEATURES:
Organized as 32K x8 / 64K x8 / 128K x8 / 256K x8
4.5-5.5V Read Operation
Superior Reliability
– Endurance: At least 1000 Cycles
– Greater than 100 years Data Retention
Low Power Consumption
–
Active Current: 20 mA (typical)
–
Standby Current: 10 μA (typical)
Fast Read Access Time
–
70 ns
–
90 ns
Fast Byte-Program Operation
–
Byte-Program Time: 20 μs (typical)
–
Chip Program Time:
0.7 seconds (typical) for SST27SF256
1.4 seconds (typical) for SST27SF512
2.8 seconds (typical) for SST27SF010
5.6 seconds (typical) for SST27SF020
Electrical Erase Using Programmer
–
Does not require UV source
–
Chip-Erase Time: 100 ms (typical)
TTL I/O Compatibility
JEDEC Standard Byte-wide EPROM Pinouts
Packages Available
–
32-pin PLCC
–
32-pin TSOP (8mm x 14mm)
–
28-pin PDIP for SST27SF256/512
–
32-pin PDIP for SST27SF010/020
PRODUCT DESCRIPTION
The SST27SF256/512/010/020 are a 32K x8 / 64K x8 /
128K x8 / 256K x8 CMOS, Many-Time Programmable
(MTP) low cost flash, manufactured with SST
’
s proprietary,
high performance SuperFlash technology. The split-gate
cell design and thick oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. These MTP devices can be electrically erased
and programmed at least 1000 times using an external pro-
grammer with a 12 volt power supply. They have to be
erased prior to programming. These devices conform to
JEDEC standard pinouts for byte-wide memories.
Featuring
SST27SF256/512/010/020 provide a Byte-Program time of
20 μs. Designed, manufactured, and tested for a wide
spectrum of applications, these devices are offered with an
endurance of at least 1000 cycles. Data retention is rated at
greater than 100 years.
high
performance
Byte-Program,
the
The SST27SF256/512/010/020 are suited for applications
that require infrequent writes and low power nonvolatile
storage. These devices will improve flexibility, efficiency,
and performance while matching the low cost in nonvolatile
applications that currently use UV-EPROMs, OTPs, and
mask ROMs.
To meet surface mount and conventional through hole
requirements, the SST27SF256/512 are offered in 32-pin
PLCC, 32-pin TSOP and 28-pin PDIP packages. The
SST27SF010/020 are offered in 32-pin PDIP 32-pin PLCC
and 32-pin TSOP packages. See Figures 1, 2, and 3 for
pinouts.
Device Operation
The SST27SF256/512/010/020 are a low cost flash solu-
tion that can be used to replace existing UV-EPROM, OTP
and mask ROM sockets. These devices are functionally
(read and program) and pin compatible with industry stan-
dard EPROM products. In addition to EPROM functionality,
these devices also support electrical erase operation via an
external programmer. They do not require a UV source to
erase, and therefore the packages do not have a window.
Read
The Read operation of the SST27SF256/512/010/020 is
controlled by CE# and OE#. Both CE# and OE# have to be
low for the system to obtain data from the outputs. Once
the address is stable, the address access time is equal to
the delay from CE# to output (T
CE
). Data is available at the
output after a delay of T
OE
from the falling edge of OE#,
assuming that CE# pin has been low and the addresses
have been stable for at least T
CE
- T
OE
. When the CE# pin
is high, the chip is deselected and a typical standby current
of 10 μA is consumed. OE# is the output control and is
used to gate data from the output pins. The data bus is in
high impedance state when either CE# or OE# is high.
Byte-Program Operation
The SST27SF256/512/010/020 are programmed by using
an external programmer. The programming mode for
SST27SF256/010/020 is activated by asserting 12V (±5%)
SST27SF256 / 512 / 010 / 0205.0V-Read 256Kb / 512Kb / 1Mb / 2Mb (x8) MTP flash memories
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| SST27SF020-70 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT07; No. of Contacts:10; Connector Shell Size:12; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight |
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| SST27SF256-70 | CONNECTOR ACCESSORY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST27SF010-70-3C-NG | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash |
| SST27SF010-70-3C-NH | 功能描述:闪存 128K X 8 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST27SF010-70-3C-NHE | 功能描述:闪存 128K X 8 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST27SF010-70-3C-PG | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:256 Kbit / 512 Kbit / 1 Mbit / 2 Mbit (x8) Many-Time Programmable Flash |
| SST27SF010-70-3C-PH | 功能描述:闪存 128K X 8 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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