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参数资料
| 型号： | SST38VF6401-90-5C-B3KE |
| 厂商： | Microchip Technology |
| 文件页数： | 2/64页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 64MBIT 90NS 48TFBGA |
| 标准包装： | 480 |
| 系列： | SST38 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 64M（4M x 16） |
| 速度： | 90ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-TFBGA |
| 供应商设备封装： | 48-TFBGA |
| 包装： | 托盘 |
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64 Mbit (x16) Advanced Multi-Purpose Flash Plus
A Microchip Technology Company
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
Data Sheet
Product Description
The SST38VF6401, SST38VF6402, SST38VF6403, and SST38VF6404 devices are 4M x16 CMOS
Advanced Multi-Purpose Flash Plus (Advanced MPF+) manufactured with SST proprietary, high-per-
formance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector
attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401/
6402/6403/6404 write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to
JEDEC standard pin assignments for x16 memories.
Featuring high performance Word-Program, the SST38VF6401/6402/6403/6404 provide a typical Word-
Program time of 7 μsec. For faster word-programming performance, the Write-Buffer Programming
feature, has a typical word-program time of 1.75 μsec. These devices use Toggle Bit or Data# Polling
to indicate Program operation completion. In addition to single-word Read, Advanced MPF+ devices
provide a Page-Read feature that enables a faster word read time of 25 ns, for words on the same
page.
To protect against inadvertent write, the SST38VF6401/6402/6403/6404 have on-chip hardware and
Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of appli-
cations, these devices are available with 100,000 cycles minimum endurance. Data retention is rated
at greater than 100 years.
The SST38VF6401/6402/6403/6404 are suited for applications that require the convenient and econom-
ical updating of program, configuration, or data memory. For all system applications, Advanced MPF+
significantly improve performance and reliability, while lowering power consumption. These devices
inherently use less energy during Erase and Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, current, and time of application. For any given
voltage range, the SuperFlash technology uses less current to program and has a shorter erase time;
therefore, the total energy consumed during any Erase or Program operation is less than alternative
flash technologies.
These devices also improve flexibility while lowering the cost for program, data, and configuration stor-
age applications. The SuperFlash technology provides fixed Erase and Program times, independent of
the number of Erase/Program cycles that have occurred. Therefore, the system software or hardware
does not have to be modified or de-rated as is necessary with alternative flash technologies, whose
Erase and Program times increase with accumulated Erase/Program cycles.
The SST38VF6401/6402/6403/6404 also offer flexible data protection features. Applications that
require memory protection from program and erase operations can use the Boot Block, Individual
Block Protection, and Advanced Protection features. For applications that require a permanent solu-
tion, the Irreversible Block Locking feature provides permanent protection for memory blocks.
To meet high-density, surface mount requirements, the SST38VF6401/6402/6403/6404 devices are
offered in 48-lead TSOP and 48-ball TFBGA packages. See Figures 2 and 3 for pin assignments and
Table 1 for pin descriptions.
?2011 Silicon Storage Technology, Inc.
2
DS-25015A
04/11
相关PDF资料 |
PDF描述 |
|---|---|
| SST38VF6402-90-5C-B3KE | IC FLASH MPF 64MBIT 90NS 48TFBGA |
| SST38VF6401-90-5C-EKE-T | IC FLASH MPF 64MBIT 90NS 48TSOP |
| SST38VF6401-90-5C-EKE | IC FLASH MPF 64MBIT 90NS 48TSOP |
| SST38VF6403-90-5C-EKE | IC FLASH MPF 64MBIT 90NS 48TSOP |
| XC5VLX30-2FFG676I | IC FPGA VIRTEX-5 30K 676FBGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST38VF6401-90-5C-EKE | 功能描述:闪存 64M (4Mx16) 90ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5C-EKE-T | 功能描述:闪存 2.7 to 3.6V 64Mbit Parallel Adv MPF+ RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5I-B3KE | 功能描述:闪存 2.7 to 3.6V 64Mbit Parallel Adv MPF+ RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST38VF6401-90-5I-B3KE-T | 制造商:Microchip Technology 功能描述:Flash Parallel 3.3V 64Mbit 4M x 16bit 90ns 48-Pin TFBGA T/R 制造商:Microchip Technology Inc 功能描述:2.7V TO 3.6V 64MBIT PM PARALLEL ADVANCED MPF+ - Tape and Reel 制造商:Microchip Technology Inc 功能描述:IC FLASH 64MBIT 90NS 48TFBGA 制造商:Microchip Technology Inc 功能描述:2.7Vto3.6V 64Mb ParAdvanced MPF+ |
| SST38VF6401-90-5I-EKE | 功能描述:闪存 64M (4Mx16) 90ns 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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