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参数资料
| 型号： | SST39LF010-45-4C-WHE |
| 厂商： | Microchip Technology |
| 文件页数： | 1/31页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 1MBIT 45NS 32TSOP |
| 标准包装： | 208 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 1M (128K x 8) |
| 速度： | 45ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 32-TFSOP（0.488"，12.40mm 宽） |
| 供应商设备封装： | 32-TSOP |
| 包装： | 托盘 |
| 产品目录页面： | 1453 (CN2011-ZH PDF) |
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1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
A Microchip Technology Company
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
The SST39LF010, SST39LF020, SST39LF040 and SST39VF010, SST39VF020,
SST39VF040 are 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash
(MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash
technology. The split-gate cell design and thick-oxide tunneling injector attain bet-
ter reliability and manufacturability compared with alternate approaches. The
SST39LF010/020/040 devices write (Program or Erase) with a 3.0-3.6V power
supply. The SST39VF010/020/040 devices write with a 2.7-3.6V power supply.
The devices conform to JEDEC standard pinouts for x8 memories.
Features
? Organized as 128K x8 / 256K x8 / 512K x8
? Single Voltage Read and Write Operations
– 3.0-3.6V for SST39LF010/020/040
– 2.7-3.6V for SST39VF010/020/040
? Superior Reliability
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
? Low Power Consumption
(typical values at 14 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 1 μA (typical)
? Sector-Erase Capability
– Uniform 4 KByte sectors
? Fast Read Access Time:
– 45 ns for SST39LF010/020/040
– 55 ns for SST39LF020/040
– 70 ns for SST39VF010/020/040
? Latched Address and Data
? Fast Erase and Byte-Program:
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 μs (typical)
– Chip Rewrite Time:
2 seconds (typical) for SST39LF/VF010
4 seconds (typical) for SST39LF/VF020
8 seconds (typical) for SST39LF/VF040
? Automatic Write Timing
– Internal V PP Generation
? End-of-Write Detection
– Toggle Bit
– Data# Polling
? CMOS I/O Compatibility
? JEDEC Standard
– Flash EEPROM Pinouts and command sets
? Packages Available
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 48-ball TFBGA (6mm x 8mm)
– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
? All devices are RoHS compliant
?2011 Silicon Storage Technology, Inc.
www.microchip.com
DS25023A
08/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST39LF010-45-4C-WHE-T | 功能描述:闪存 3.0 to 3.6V 1Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39LF010-45-4C-WK | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| SST39LF010-45-4C-WKE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| SST39LF010-45-4I-B3H | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| SST39LF010-45-4I-B3HE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
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