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| 型号： | SST39LF020-55-4C-WHE |
| 厂商： | Microchip Technology |
| 文件页数： | 13/31页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 2MBIT 55NS 32TSOP |
| 标准包装： | 208 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 2M (256K x 8) |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 32-TFSOP（0.488"，12.40mm 宽） |
| 供应商设备封装： | 32-VSOP（8x14） |
| 包装： | 托盘 |
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1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
A Microchip Technology Company
SST39VF010 / SST39VF020 / SST39VF040
Data Sheet
Table 8: DC Operating Characteristics -V DD = 3.0-3.6V for SST39LF010/020/040 and 2.7-
3.6V for SST39VF010/020/040 1
Limits
Symbol
Parameter
Min
Max
Units
Test Conditions
I DD
Power Supply Current
Address input=V ILT /V IHT , at f=1/T RC Min
V DD =V DD Max
Read 2
Program and Erase 3
20
30
mA
mA
CE#=V IL , OE#=WE#=V IH , all I/Os open
CE#=WE#=V IL , OE#=V IH
I SB
I LI
I LO
V IL
V IH
V IHC
V OL
V OH
Standby V DD Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
0.7V DD
V DD -0.3
V DD -0.2
15
1
10
0.8
0.2
μA
μA
μA
V
V
V
V
V
CE#=V IHC , V DD =V DD Max
V IN =GND to V DD , V DD =V DD Max
V OUT =GND to V DD , V DD =V DD Max
V DD =V DD Min
V DD =V DD Max
V DD =V DD Max
I OL =100 μA, V DD =V DD Min
I OH =-100 μA, V DD =V DD Min
T8.7 25023
1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C
(room temperature), and V DD = 3V for VF devices. Not 100% tested.
2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information.
3. 30 mA max for Erase operations in the industrial temperature range.
Table 9: Recommended System Power-up Timings
Symbol
T PU-READ1
T PU-WRITE1
Parameter
Power-up to Read Operation
Power-up to Program/Erase Operation
Minimum
100
100
Units
μs
μs
T9.1 25023
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 10: Capacitance (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
C I/O
1
I/O Pin Capacitance
V I/O = 0V
12 pF
C IN1
Input Capacitance
V IN = 0V
6 pF
T10.0 25023
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 11: Reliability Characteristics
Symbol
N END1,2
T DR1
I LTH1
Parameter
Endurance
Data Retention
Latch Up
Minimum Specification
10,000
100
100 + I DD
Units
Cycles
Years
mA
Test Method
JEDEC Standard A117
JEDEC Standard A103
JEDEC Standard 78
T11.3 25023
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
2. N END endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating
would result in a higher minimum specification.
?2011 Silicon Storage Technology, Inc.
13
DS25023A
08/11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SST39LF020-55-4C-WK | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| SST39LF020-55-4C-WKE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| SST39LF020-55-4I-B3H | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| SST39LF020-55-4I-B3HE | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
| SST39LF020-55-4I-B3K | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash |
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