- 您现在的位置：买卖IC网 > PDF目录4237 > SST39LF802C-55-4C-B3KE-T (Microchip Technology)IC FLASH MPF 8MBIT 48-TFBGA PDF资料下载
参数资料
| 型号： | SST39LF802C-55-4C-B3KE-T |
| 厂商： | Microchip Technology |
| 文件页数： | 2/38页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 8MBIT 48-TFBGA |
| 标准包装： | 2,500 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 8M（512K x 16） |
| 速度： | 55ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-TFBGA |
| 供应商设备封装： | 48-TFBGA（6x8） |
| 包装： | 带卷 (TR) |
第1页当前第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页
8 Mbit (x16) Multi-Purpose Flash Plus
A Microchip Technology Company
SST39VF801C / SST39VF802C / SST39LF801C / SST39LF802C
Data Sheet
Product Description
The SST39VF801C/802C and SST39LF801C/802C devices are 512K x16 CMOS Multi-Purpose Flash
Plus (MPF+) manufactured with SST proprietary, high performance CMOS SuperFlash technology.
The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability
compared with alternate approaches. The SST39VF801C/802C and SST39LF801C/802C write (Program
or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16
memories.
Featuring high performance Word-Program, the SST39VF801C/802C and SST39LF801C/802C
devices provide a typical Word-Program time of 7 μsec. These devices use Toggle Bit, Data# Polling,
or the RY/BY# pin to indicate the completion of Program operation. To protect against inadvertent
write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured,
and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical
endurance of 100,000 cycles. Data retention is rated at greater than 100 years.
The SST39VF801C/802C and SST39LF801C/802C devices are suited for applications that require
convenient and economical updating of program, configuration, or data memory. For all system appli-
cations, they significantly improve performance and reliability, while lowering power consumption. They
inherently use less energy during Erase and Program than alternative flash technologies. The total
energy consumed is a function of the applied voltage, current, and time of application. Since for any
given voltage range, the SuperFlash technology uses less current to program and has a shorter erase
time, the total energy consumed during any Erase or Program operation is less than alternative flash
technologies. These devices also improve flexibility while lowering the cost for program, data, and con-
figuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet high density, surface mount requirements, the SST39VF801C/802C and SST39LF801C/802C
are offered in 48-lead TSOP, 48-ball TFBGA, and 48-ball WFBGA packages. See Figures 2, 3, and 4
for pin assignments.
?2011 Silicon Storage Technology, Inc.
2
DS25041A
05/11
相关PDF资料 |
PDF描述 |
|---|---|
| XC6SLX150-N3FGG900I | IC FPGA SPARTAN-6 900FBGA |
| SST39LF801C-55-4C-B3KE-T | IC FLASH MPF 8MBIT 48-TFBGA |
| SST39VF802C-70-4I-B3KE-T | IC MPF FLASH 8MBIT CMOS 48TFBGA |
| SST39VF802C-70-4C-B3KE-T | IC MPF FLASH 8MBIT CMOS 48TFBGA |
| XC6SLX150-2FG900I | IC FPGA SPARTAN 6 900FGGBGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST39LF802C-55-4C-EKE | 功能描述:闪存 3.0 to 3.6V 8Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39LF802C-55-4C-EKE-T | 功能描述:闪存 3.0 to 3.6V 8Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39LF802C-55-4C-MAQE | 功能描述:闪存 3.0 to 3.6V 8Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39LF802C-55-4C-MAQE-T | 功能描述:闪存 3.0 to 3.6V 8Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39SF010 | 制造商:SST 制造商全称:Silicon Storage Technology, Inc 功能描述:512 Kbit / 1 Mbit (x8) Multi-Purpose Flash |
发布紧急采购，3分钟左右您将得到回复。