参数资料
型号: SST39VF3202C-70-4I-B3KE-T
厂商: Microchip Technology
文件页数: 2/37页
文件大小: 0K
描述: IC FLASH MPF+ 32MBIT 48-TFBGA
标准包装: 2,500
系列: SST39 MPF™
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 32M(2M x 16)
速度: 70ns
接口: 并联
电源电压: 2.7 V ~ 3.6 V
工作温度: -40°C ~ 85°C
封装/外壳: 48-TFBGA
供应商设备封装: 48-TFBGA(6x8)
包装: 带卷 (TR)
32 Mbit Multi-Purpose Flash Plus
A Microchip Technology Company
SST39VF3201C / SST39VF3202C
Preliminary Specifications
Product Description
The SST39VF3201C and SST39VF3202C devices are 2M x16 CMOS Multi-Purpose Flash Plus
(MPF+) manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The
split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability
compared with alternate approaches. The SST39VF3201C/3202C write (Program or Erase) with a 2.7-
3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories.
Featuring high performance Word-Program, the SST39VF3201C/3202C devices provide a typical
Word-Program time of 7 μsec. These devices use Toggle Bit, Data# Polling, or RY/BY# pin to indicate
the completion of Program operation. To protect against inadvertent write, they have on-chip hardware
and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of
applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data
retention is rated at greater than 100 years.
The SST39VF3201C/3202C devices are suited for applications that require convenient and economical
updating of program, configuration, or data memory. For all system applications, they significantly
improve performance and reliability, while lowering power consumption. They inherently use less
energy during Erase and Program than alternative flash technologies. The total energy consumed is a
function of the applied voltage, current, and time of application. Since for any given voltage range, the
SuperFlash technology uses less current to program and has a shorter erase time, the total energy
consumed during any Erase or Program operation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for program, data, and configuration storage
applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet high-density, surface mount requirements, the SST39VF3201C/3202C devices are offered in
48-lead TSOP and 48-ball TFBGA packages. See Figure 2 and Figure 3 for pin assignments.
?2011 Silicon Storage Technology, Inc.
2
DS25020A
06/11
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SST39VF3202C-70-4I-EKE 功能描述:闪存 2.7V to 3.6V 32Mbit Multi-Prps Fl RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39VF3202C-70-4I-EKE-T 功能描述:闪存 2.7V to 3.6V 32Mbit Multi-Prps Fl RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39VF320-70-4C-B3K 功能描述:闪存 2M X 16 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39VF320-70-4C-B3KE 功能描述:闪存 2M X 16 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39VF320-70-4C-EK 功能描述:闪存 2M X 16 70ns RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel