参数资料
型号: SST39VF6402B-70-4C-EKE
厂商: Microchip Technology
文件页数: 2/36页
文件大小: 0K
描述: IC FLASH MPF 64MBIT 70NS 48TSOP
特色产品: SST Serial and Parallel Flash Memory
标准包装: 96
系列: SST39 MPF™
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 64M(4M x 16)
速度: 70ns
接口: 并联
电源电压: 2.7 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 48-TFSOP(0.724",18.40mm 宽)
供应商设备封装: 48-TSOP
包装: 托盘
产品目录页面: 1453 (CN2011-ZH PDF)
64 Mbit Multi-Purpose Flash Plus
A Microchip Technology Company
SST39VF6401B / SST39VF6402B
Not Recommended for New Designs
Product Description
The SST39VF640xB devices are 4M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with
SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and
thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate
approaches. The SST39VF640xB write (Program or Erase) with a 2.7-3.6V power supply. These
devices conform to JEDEC standard pin assignments for x16 memories.
Featuring high performance Word-Program, the SST39VF640xB devices provide a typical Word-Pro-
gram time of 7 μsec. These devices use Toggle Bit or Data# Polling to indicate the completion of Pro-
gram operation. To protect against inadvertent write, they have on-chip hardware and Software Data
Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these
devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at
greater than 100 years.
The SST39VF640xB devices are suited for applications that require convenient and economical updat-
ing of program, configuration, or data memory. For all system applications, they significantly improve
performance and reliability, while lowering power consumption. They inherently use less energy during
Erase and Program than alternative flash technologies. The total energy consumed is a function of the
applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash
technology uses less current to program and has a shorter erase time, the total energy consumed dur-
ing any Erase or Program operation is less than alternative flash technologies. These devices also
improve flexibility while lowering the cost for program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Program times, independent of the number of
Erase/Program cycles that have occurred. Therefore the system software or hardware does not have
to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro-
gram times increase with accumulated Erase/Program cycles.
To meet high-density, surface mount requirements, the SST39VF640xB devices are offered in 48-lead
TSOP and 48-ball TFBGA packages. See Figures and 2 for pin assignments.
?2011 Silicon Storage Technology, Inc.
2
DS25008A
08/11
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SST39VF6401B-70-4I-EKE IC FLASH MPF 64MBIT 70NS 48TSOP
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SST39VF6402B-70-4C-EKE-T 功能描述:闪存 2.7 to 3.6V 64Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39VF6402B-70-4I-B1KE 功能描述:闪存 64M (4Mx16) 70ns 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39VF6402B-70-4I-B1KE-T 功能描述:闪存 2.7 to 3.6V 64Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39VF6402B-70-4I-EKE 功能描述:闪存 2.7 to 3.6V 64Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39VF800-90-4C-EK 制造商:SILICON STORAGE TECH 功能描述: 制造商:Silicon Storage Technology (SST) 功能描述: