参数资料
型号: SST39WF400B-70-4C-MAQE-T
厂商: Microchip Technology
文件页数: 2/32页
文件大小: 0K
描述: IC FLASH MPF 4MBIT 70NS 48WFBGA
标准包装: 2,500
系列: SST39 MPF™
格式 - 存储器: 闪存
存储器类型: FLASH
存储容量: 4M (256K x 16)
速度: 70ns
接口: 并联
电源电压: 1.65 V ~ 1.95 V
工作温度: 0°C ~ 70°C
封装/外壳: 48-WFBGA
供应商设备封装: 48-WFBGA(6x4)
包装: 带卷 (TR)
4 Mbit (x16) Multi-Purpose Flash
A Microchip Technology Company
SST39WF400B
Data Sheet
Product Description
The SST39WF400B is a 256K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprie-
tary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tun-
neling injector attain better reliability and manufacturability compared to alternate approaches. The
SST39WF400B writes (Program or Erase) with a 1.65-1.95V power supply. This device conforms to
JEDEC standard pin assignments for x16 memories.
The SST39WF400B features high-performance Word-Programming which provides a typical Word-
Program time of 28 μsec. It uses Toggle Bit or Data# Polling to detect the completion of the Program or
Erase operation. On-chip hardware and software data protection schemes protect against inadvertent
writes. Designed, manufactured, and tested for a wide spectrum of applications, the SST39WF400B is
offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than
100 years.
The SST39WF400B is suited for applications that require convenient and economical updating of pro-
gram, configuration, or data memory. For all system applications, this MPF significantly improves per-
formance and reliability, while lowering power consumption. It inherently uses less energy during Erase
and Program than alternative flash technologies. When programming a flash device, the total energy
consumed is a function of the applied voltage, current, and time of application. For any given voltage
range, SuperFlash technology uses less current to program and has a shorter erase time; therefore,
the total energy consumed during any Erase or Program operation is less than alternative flash tech-
nologies. These devices also improve flexibility while lowering the cost for program, data, and configu-
ration storage applications.
SuperFlash technology provides fixed Erase and Program times independent of the number of Erase/
Program cycles that have occurred. Consequently, the system software or hardware does not have to
be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program
times increase with accumulated Erase/Program cycles.
To meet surface mount requirements, the SST39WF400B is offered in 48-ball TFBGA, 48-ball
WFBGA, and a 48-ball XFLGA packages. See Figures 2 and 3 for pin assignments and Table 1 for pin
descriptions.
?2011 Silicon Storage Technology, Inc.
2
DS25034A
09/11
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SST39WF400B-70-4C-Y1QE 功能描述:闪存 4M (256Kx16) 70ns 1.8V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39WF400B-70-4I-B3KE 功能描述:闪存 4M (256Kx16) 70ns Industrial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39WF400B-70-4I-B3KE-T 功能描述:闪存 1.65 to 1.95V 4Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39WF400B-70-4I-D1QE 功能描述:闪存 4M (256Kx16) 70ns Industrial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST39WF400B-70-4I-MAQE 功能描述:闪存 4M (256Kx16) 70ns 1.65-1.95V Indust RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel