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参数资料
| 型号： | SST39WF400B-70-4I-B3KE |
| 厂商： | Microchip Technology |
| 文件页数： | 7/32页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 4MBIT 70NS 48TFBGA |
| 标准包装： | 480 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 4M (256K x 16) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 1.65 V ~ 1.95 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 48-TFBGA |
| 供应商设备封装： | 48-TFBGA |
| 包装： | 托盘 |
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4 Mbit (x16) Multi-Purpose Flash
A Microchip Technology Company
SST39WF400B
Data Sheet
Sector-/Block-Erase Operation
The SST39WF400B offers both Sector-Erase and Block-Erase modes which allow the system to erase
the device on a sector-by-sector, or block-by-block, basis.
The sector architecture is based on an uniform sector size of 2 KWord. Initiate the Sector-Erase oper-
ation by executing a six-byte command sequence with Sector-Erase command (30H) and sector
address (SA) in the last bus cycle.
The Block-Erase mode is based on an uniform block size of 32 KWord. Initiate the Block-Erase opera-
tion by executing a six-byte command sequence with Block-Erase command (50H) and block address
(BA) in the last bus cycle.
The sector or block address is latched on the falling edge of the sixth WE# pulse, while the command
(30H or 50H) is latched on the rising edge of the sixth WE# pulse. The internal Erase operation begins
after the sixth WE# pulse.
The End-of-Erase operation can be determined using either Data# Polling or Toggle Bit methods. See
Figures 11 and 12 for timing waveforms. Any commands issued during the Sector- or Block-Erase
operation are ignored.
Chip-Erase Operation
The SST39WF400B provides a Chip-Erase operation, which allows the user to erase the entire mem-
ory array to the ‘1’ state. This is useful when the entire device must be quickly erased.
Initiate the Chip-Erase operation by executing a six-byte command sequence with Chip-Erase com-
mand (10H) at address 5555H in the last byte sequence.
The Erase operation begins with the rising edge of the sixth WE# or CE#, whichever occurs first. Dur-
ing the Erase operation, the only valid read is Toggle Bit or Data# Polling. See Table 4 for the command
sequence, Figure 10 for the timing diagram, and Figure 21 for the flowchart. Any commands issued
during the Chip-Erase operation are ignored.
?2011 Silicon Storage Technology, Inc.
7
DS25034A
09/11
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| SST39WF400B-70-4I-B3KE-T | 功能描述:闪存 1.65 to 1.95V 4Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39WF400B-70-4I-D1QE | 功能描述:闪存 4M (256Kx16) 70ns Industrial Temp RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39WF400B-70-4I-MAQE | 功能描述:闪存 4M (256Kx16) 70ns 1.65-1.95V Indust RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39WF400B-70-4I-MAQE-T | 功能描述:闪存 1.65 to 1.95V 4Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39WF400B-70-4I-VA | 制造商:Microchip Technology Inc 功能描述:1.65V TO 1.95V 4MBIT MULTI-PURPOSE FLASH - Gel-pak, waffle pack, wafer, diced wafer on film |
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