- 您现在的位置：买卖IC网 > Datasheet目录364 > SST39WF800B-70-4C-EKE (Microchip Technology)IC FLASH MPF 8MBIT 70NS 48TSOP Datasheet资料下载
参数资料
| 型号： | SST39WF800B-70-4C-EKE |
| 厂商： | Microchip Technology |
| 文件页数： | 6/33页 |
| 文件大小： | 0K |
| 描述： | IC FLASH MPF 8MBIT 70NS 48TSOP |
| 标准包装： | 1 |
| 系列： | SST39 MPF™ |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 8M（512K x 16） |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 1.65 V ~ 1.95 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 48-TFSOP（0.724"，18.40mm 宽） |
| 供应商设备封装： | 48-TSOP |
| 包装： | 托盘 |
第1页第2页第3页第4页第5页当前第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页
8 Mbit (x16) Multi-Purpose Flash
A Microchip Technology Company
SST39WF800B
Data Sheet
Device Operation
Commands, which are used to initiate the memory operation functions of the device, are written to the
device using standard microprocessor write sequences. A command is written by asserting WE# low
while keeping CE# low. The address bus is latched on the falling edge of WE# or CE#, whichever
occurs last. The data bus is latched on the rising edge of WE# or CE#, whichever occurs first.
Read
The Read operation of the SST39WF800B is controlled by CE# and OE#; both have to be low for the
system to obtain data from the outputs.
CE# is used for device selection. When CE# is high, the chip is deselected and only standby power is
consumed.
OE# is the output control and is used to gate data from the output pins. The data bus is in high imped-
ance state when either CE# or OE# is high. See Figure 5.
Word-Program Operation
The SST39WF800B is programmed on a word-by-word basis. The sector where the word exists must
be fully erased before programming.
Programming is accomplished in three steps:
1.
2.
3.
Load the three-byte sequence for Software Data Protection.
Load word address and word data. During the Word-Program operation, the addresses
are latched on the falling edge of either CE# or WE#, whichever occurs last. The data is
latched on the rising edge of either CE# or WE#, whichever occurs first.
Initiate the internal Program operation after the rising edge of the fourth WE# or CE#,
whichever occurs first. Once initiated, the Program operation will be completed within 40
μs. See Figures 6 and 7 for WE# and CE# controlled Program operation timing diagrams
and Figure 17 for flowcharts.
During the Program operation, the only valid reads are Data# Polling and Toggle Bit. During the inter-
nal Program operation, the host is free to perform additional tasks. Any commands issued during the
internal Program operation are ignored.
?2011 Silicon Storage Technology, Inc.
6
DS25031A
08/11
相关PDF资料 |
PDF描述 |
|---|---|
| SST49LF008A-33-4C-EIE-T | IC FLASH FWH 8MBIT 33MHZ 40TSOP |
| SST49LF016C-33-4C-EIE-T | IC FLASH SER LPC 16MBIT 40TSOP |
| SST49LF080A-33-4C-WHE-T | IC FLASH SER LPC 8MBIT 32TSOP |
| SST49LF160C-33-4C-NHE | IC FLASH SER LPC 16MBIT 32PLCC |
| ST40 | DIAC 35-45V BILATERAL TRIG DO214 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST39WF800B-70-4C-MAQE | 功能描述:闪存 8M (512Kx16) 70ns 1.65-1.95V Comm RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39WF800B-70-4C-Y1QE | 功能描述:闪存 8M (512Kx16) 70ns 1.65-1.95V Comm RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39WF800B-70-4I-B3KE | 功能描述:闪存 8M (512Kx16) 70ns 1.65-1.95V Indust RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39WF800B-70-4I-B3KE-T | 功能描述:闪存 1.65 to 1.95V 8Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST39WF800B-70-4I-C2QE | 功能描述:闪存 1.65 to 1.95V 8Mbit Multi-Purpose 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。