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参数资料
| 型号： | SST49LF016C-33-4C-EIE-T |
| 厂商： | Microchip Technology |
| 文件页数： | 19/43页 |
| 文件大小： | 0K |
| 描述： | IC FLASH SER LPC 16MBIT 40TSOP |
| 标准包装： | 1,500 |
| 系列： | SST49 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | FLASH |
| 存储容量： | 16M（2M x 8） |
| 速度： | 33MHz |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 85°C |
| 封装/外壳： | 40-TFSOP（0.724"，18.40mm 宽） |
| 供应商设备封装： | 40-TSOP |
| 包装： | 带卷 (TR) |
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16 Mbit LPC Serial Flash
A Microchip Technology Company
SST49LF016C
Data Sheet
Erase-Suspend/Erase-Resume Commands
The Erase Suspend command allows Sector-Erase or Block-Erase interruption in order to read or pro-
gram data in another block of memory. Once the Erase-Suspend command is executed, the device will
suspend any on-going Erase operation within time T ES (10 μs). The device outputs status register data
when read after the Erase-Suspend command is written. The system is able to determine when the
Erase operation has been completed (WSMS=1) by polling the status register. After an Erase-Sus-
pend, the device will set the status register ESS bit (ESS=1) if the Erase has been successfully sus-
pended (refer to Table 10, “Software Status Register”). The Erase-Resume command resumes the
Erase operation that had been previously suspended.
After a successful Erase-Suspend, a Read-Array command may be written to read data from a Sector/
Block other than the suspended Sector/Block. A Program command sequence may also be issued dur-
ing Erase Suspend to program data in memory locations other than the Sector/Block currently in the
Erase-Suspend mode. If a Read-Array command is written to an address within the suspended Sector/
Block this may result in reading invalid data. If a Program command is written to an address within the
suspended Sector/Block the command is acknowledged but rejected. Other valid commands while
erase is suspended include Read-Status-Register, Read-Device-ID, and Erase-Resume.
The Erase-Resume command resumes the Erase process in the suspended sector or block. After the
Erase-Resume command is written, the device will continue the Erase process. Erase cannot resume
until any Program operation initiated during Erase-Suspend has completed. Suspended operations
cannot be nested: the system needs to complete or resume any previously suspended operation
before a new operation can be suspended. See Figure 8 for flowchart.
Program-Suspend/Program-Resume Command
The Program-Suspend and Program-Resume commands have no influence on the device. Since the
device requires a maximum of T BP (10 μs) in order to program a byte (see Table 28), when a Program-
Suspend command is written, the suspended Byte Program operation will always be successfully com-
pleted within the suspend latency time (T ES = T BP = 10 μs).
Security ID Commands
The SST49LF016C device offers a 256-bit Security ID space. The Security ID space is divided into two
parts. One 64-bit segment is programmed at SST with a unique 64-bit number: this number cannot be
changed by the user. The other segment is 192-bit wide and is left blank: this space is available for
customers and can be programmed as desired.
The User-Security-ID-Program command is shown in Table 8, “Software Command Sequence”. Use
the memory addresses specified in Table 11 for Security ID programming. Once the customer segment
is programmed, it can be locked to prevent any alteration. The User-Security-ID-Program-Lockout
command is shown in Table 8, “Software Command Sequence”.
In order to read the Security ID information, the user can issue a Read Security ID Command (90H) to
the device. At this point the device enters the Read-Software-ID/Read-Security-ID mode. The Security
ID information can be read at the memory addresses in Table 11.
A Read-Array/Reset command (FFH) must then be issued to the device in order to exit the Read-Soft-
ware-ID/Read-Security-ID mode and return to Read-Array mode.
An alternate method to read the Security ID information is to read the Security ID registers located into
the register space as described in the “Security ID Registers” section.
?2011 Silicon Storage Technology, Inc.
19
DS25029A
06/11
相关PDF资料 |
PDF描述 |
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| SST49LF080A-33-4C-WHE-T | IC FLASH SER LPC 8MBIT 32TSOP |
| SST49LF160C-33-4C-NHE | IC FLASH SER LPC 16MBIT 32PLCC |
| ST40 | DIAC 35-45V BILATERAL TRIG DO214 |
| STRIKER | SURGE SUPPRESSR 120V 7OUT 6'CORD |
| SUPER-7 | SURGE SUPPRESSOR 7 OUT 7' CORD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SST49LF016C-33-4C-NHE | 功能描述:闪存 16M (2Mx8) 33MHz 3.0-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST49LF016C-33-4C-NHE-T | 功能描述:闪存 3.0 to 3.6V 16Mbit LPC Firmware 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST49LF016C-33-4C-WHE | 功能描述:闪存 16M (2Mx8) 33MHz 3.0-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
| SST49LF016C-33-4C-WHE_ | 制造商:Microchip Technology Inc 功能描述: |
| SST49LF016C-33-4C-WHE-T | 功能描述:闪存 3.0 to 3.6V 16Mbit LPC Firmware 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel |
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