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参数资料
| 型号： | SSTPAD50 |
| 厂商： | VISHAY SILICONIX |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | SIGNAL DIODE, TO-236 |
| 文件页数： | 2/2页 |
| 文件大小： | 19K |
| 代理商： | SSTPAD50 |
PAD/JPAD/SSTPAD Series
Vishay Siliconix
www.vishay.com
5-2
Document Number: 70339
S-04029—Rev. H, 04-Jun-01
ABSOLUTE MAXIMUM RATINGSa
Forward Current:
(PAD
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(JPAD/SSTPAD )
10 mA
. . . . . . . . . . . . . . . . . . .
Total Device Dissipation:
(PAD)b
300 mW
. . . . . . . . . . . . . . . . . . . . . . . . . .
(JPAD/SSTPAD)b
350 mW
. . . . . . . . . . . . . . . .
Operation Junction Temp:
(PAD)
–55 to 175
_C
. . . . . . . . . . . . . . . . . . . . . . .
(JPAD/SSTPAD )c
–55 to 150
_C
. . . . . . . . . . . .
Lead Temperature (1/16” from case for 10 sec.)
300
_C
. . . . . . . . . . . . . . . . . . .
Notes:
a.
TA = 25_C unless otherwise noted.
b.
Derate 2 mW/
_C above 25_C.
c.
Derate 2.8 mW/
_C above 25_C.
SPECIFICATIONS SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typa
Max
Unit
Static
PAD1
–0.3
–1
PAD5/JPAD5/SSTPAD5
–1
–5
Reverse Current
IR
VR = –20 V
PAD50/JPAD50
–5
–50
pA
SSTPAD100
–10
–100
PAD1/PAD5
–45
–60
Reverse Breakdown Voltage
BVR
IR = –1 mA
SSTPAD5/100
–30
–55
All Others
–35
–55
V
Forward Voltage Drop
VF
IF = 1 mA
0.8
1.5
Dynamic
PAD1/PAD5
0.5
0.8
Reverse Capacitance
CR
VR = –5V, f = 1 MHz
All Others
1.5
2
pF
Notes:
a.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Reverse Current vs. Reverse Voltage
0
I R @ 125_C
IR @ 25_C
Reverse Current vs. Temperature
–1000
–100
–10
–1
–0.1
–6
–12
–18
–24
–30
–55
–35
125
–100
–10
–0.01
–1
–0.1
–15
5
25
45
65
85
105
VR (V)
TA – Temperature (_C)
VR = –20 V
PAD/JPAD/SSTPAD5
PAD1
PAD/JPAD/SSTPAD5
PAD1/5
All Others
I R
(pA)
I R
(pA)
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| SSTPAD50_SOT-23 | 制造商:MICROSS 制造商全称:MICROSS 功能描述:a low leakage Pico-Amp Diode |
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