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参数资料
| 型号： | ST110S08P2PBF |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | 175 A, 800 V, SCR, TO-209AC |
| 封装： | ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, TO-94, 3 PIN |
| 文件页数： | 7/10页 |
| 文件大小： | 161K |
| 代理商： | ST110S08P2PBF |
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For technical questions within your region, please contact one of the following:
Document Number: 94393
6
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 17-Aug-10
ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 9 - Gate Characteristics
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
thJC
Transient
Thermal
Impedance
Z
(K/W)
ST110S Series
Steady State Value
R
= 0.195 K/W
(DC Operation)
thJC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
Tj=25
°C
Tj=125
°C
Tj=-40
°C
(1)
(2)
(3)
Instantaneous Gate Current (A)
Instantaneous
Gate
Voltage
(V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 s
tr<=1 s
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST110S Series
Rectangular gate pulse
(4)
相关PDF资料 |
PDF描述 |
|---|---|
| ST110S08P2VLPBF | 175 A, 800 V, SCR, TO-209AC |
| ST110S08P2VPBF | 175 A, 800 V, SCR, TO-209AC |
| ST110S12P0LPBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P0PBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P0VLPBF | 175 A, 1200 V, SCR, TO-209AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST110S08P2VLPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Phase Control Thyristors (Stud Version), 110 A |
| ST110S08P2VPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Phase Control Thyristors (Stud Version), 110 A |
| ST110S12P | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| ST110S12P0 | 制造商:n/a 功能描述:_ |
| ST110S12P0LPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Phase Control Thyristors (Stud Version), 110 A |
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