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参数资料
| 型号： | ST110S08P2VPBF |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | 175 A, 800 V, SCR, TO-209AC |
| 封装： | ROHS COMPLIANT, HERMETIC SEALED, METAL, TO-94, 3 PIN |
| 文件页数： | 6/10页 |
| 文件大小： | 161K |
| 代理商： | ST110S08P2VPBF |
Document Number: 94393
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 17-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
5
ST110SPbF Series
Phase Control Thyristors
(Stud Version), 110 A
Vishay Semiconductors
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
25
50
75
100
125
Maximum Allowable Ambient Temperature (°C)
R
=
0.1
K/
W
-
D
e
lta
R
th
SA
0.2
K/
W
0.3
K/
W
0.4
K/
W
0.6
K/ W
0.8
K/ W
1 K/ W
0.5
K/ W
1.2 K/
W
0
20
40
60
80
100
120
140
160
180
200
220
0
20
40
60
80 100 120 140 160 180
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum
Average
On-state
Power
Loss
(W)
Average On-state Current (A)
ST110S Series
T = 125°C
J
1000
1200
1400
1600
1800
2000
2200
2400
110
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak
Half
Sine
Wave
On-state
Current
(A)
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
ST110S Series
J
At Any Rated Load Condition And With
Rated V
Applied Following Surge.
RRM
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
0.01
0.1
1
10
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Peak
Half
Sine
Wave
On-state
Current
(A)
Initial T = 125°C
No Voltage Reapplied
Rated V
Reapplied
J
RRM
ST110S Series
Instantaneous On-state Voltage (V)
Instantaneous
On-state
Current
(A)
10
100
1000
10000
0.5
1.5
2.5
3.5
4.5
Tj = 25C
Tj = 125C
ST110S Series
相关PDF资料 |
PDF描述 |
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| ST110S12P0LPBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P0PBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P0VLPBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P1LPBF | 175 A, 1200 V, SCR, TO-209AC |
| ST110S12P1PBF | 175 A, 1200 V, SCR, TO-209AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST110S12P | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| ST110S12P0 | 制造商:n/a 功能描述:_ |
| ST110S12P0LPBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Phase Control Thyristors (Stud Version), 110 A |
| ST110S12P0PBF | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Phase Control Thyristors (Stud Version), 110 A |
| ST110S12P0V | 功能描述:SCR 1200 Volt 110 Amp RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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