参数资料
型号: ST110S12P0LPBF
厂商: VISHAY SEMICONDUCTORS
元件分类: 晶闸管
英文描述: 175 A, 1200 V, SCR, TO-209AC
封装: ROHS COMPLIANT, HERMETIC SEALED, CERAMIC, TO-94, 3 PIN
文件页数: 7/10页
文件大小: 161K
代理商: ST110S12P0LPBF
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 94393
6
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 17-Aug-10
ST110SPbF Series
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 110 A
Fig. 8 - Thermal Impedance ZthJC Characteristic
Fig. 9 - Gate Characteristics
0.001
0.01
0.1
1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
thJC
Transient
Thermal
Impedance
Z
(K/W)
ST110S Series
Steady State Value
R
= 0.195 K/W
(DC Operation)
thJC
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
Tj=25
°C
Tj=125
°C
Tj=-40
°C
(1)
(2)
(3)
Instantaneous Gate Current (A)
Instantaneous
Gate
Voltage
(V)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/dt : 20V, 10ohms; tr<=1 s
tr<=1 s
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Device: ST110S Series
Rectangular gate pulse
(4)
相关PDF资料
PDF描述
ST110S12P0PBF 175 A, 1200 V, SCR, TO-209AC
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相关代理商/技术参数
参数描述
ST110S12P0PBF 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Phase Control Thyristors (Stud Version), 110 A
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