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参数资料
| 型号： | ST1230C12K1LPBF |
| 元件分类： | 晶闸管 |
| 英文描述： | 3200 A, 1200 V, SCR |
| 封装： | KPUK-2 |
| 文件页数： | 2/7页 |
| 文件大小： | 87K |
| 代理商： | ST1230C12K1LPBF |
ST1230C..K Series
2
www.irf.com
Bulletin I25194 rev. B 01/00
I
T(AV)
Max. average on-state current
1745 (710)
A
180° conduction, half sine wave
@ Heatsink temperature
55 (85)
°C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
3200
DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
33500
t = 10ms
No voltage
non-repetitive surge current
35100
A
t = 8.3ms
reapplied
28200
t = 10ms
100% V
RRM
29500
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2t
Maximum I
2t for fusing
5615
t = 10ms
No voltage
Initial T
J = TJ max.
5126
t = 8.3ms
reapplied
3971
t = 10ms
100% V
RRM
3625
t = 8.3ms
reapplied
I
2√t
Maximum I
2√t for fusing
56150
KA
2√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO) 1
Low level value of threshold
voltage
V
T(TO) 2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.62
V
I
pk
= 4000A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Typical latching current
1000
0.93
(16.7% x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ max.
0.17
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
0.16
(I >
π x I
T(AV) ),TJ = TJ max.
Parameter
ST1230C..K
Units Conditions
1.02
(I >
π x I
T(AV)), TJ = TJ max.
On-state Conduction
KA
2s
V
m
mA
T
J
= 25°C, anode supply 12V resistive load
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J = TJ max
VV
mA
08
800
900
12
1200
1300
14
1400
1500
16
1600
1700
ST1230C..K
100
相关PDF资料 |
PDF描述 |
|---|---|
| ST1230C12K3LPBF | 3200 A, 1200 V, SCR |
| ST1230C14K0PBF | 3200 A, 1400 V, SCR |
| ST1230C14K0LPBF | 3200 A, 1400 V, SCR |
| ST1230C14K1LPBF | 3200 A, 1400 V, SCR |
| ST1230C14K2PBF | 3200 A, 1400 V, SCR |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST1230C12K1P | 功能描述:SCR模块 1745 Amp 1200 Volt 3200 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| ST1230C12K2LP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A |
| ST1230C12K2P | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A |
| ST1230C12K3LP | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A |
| ST1230C12K3P | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 1745 A |
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