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参数资料
| 型号： | ST1280C06K0 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | 4150 A, 600 V, SCR |
| 封装： | KPUK-2 |
| 文件页数： | 7/7页 |
| 文件大小： | 87K |
| 代理商： | ST1280C06K0 |
ST1280C..K Series
7
www.irf.com
Bulletin I25195 rev. B 01/00
Fig. 9 - On-state Voltage Drop Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs Characteristics
Fig. 11 - Gate Characteristics
Instantaneous On-state Voltage (V)
Instantaneous
On-state
Current
(A)
Square Wave Pulse Duration (s)
Transient
Thermal
Impedance
Z
(K/W)
thJ-hs
Instantaneous Gate Current (A)
Instantaneous
Gate
Voltage
(V)
100
1000
10000
100000
0.5
1
1.5
2
2.5
3
3.5
4
4.5
T = 25C
J
T = 125C
J
ST1280C..K Series
0.001
0.01
0.1
0.001
0.01
0.1
1
10
100
Steady State Value
R
= 0.042 K/W
(Single Side Cooled)
R
= 0.021 K/W
(Double Side Cooled)
(DC Operation)
thJ-hs
ST1280C..K Series
0.1
1
10
100
0.001
0.01
0.1
1
1 0
1 0 0
VG D
IG D
(b )
(a )
T
j=
25
°C
T
j=
1
25
°C
T
j=
-40
°C
( 1 ) (2) (3)
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
Rectan g ular g ate pulse
a ) Recommended load line for
b ) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
Fre q uenc y Limited b y PG ( AV )
rated di/dt : 20V, 10ohms; tr<=1 s
tr<=1 s
Device: ST1280C..K Series
相关PDF资料 |
PDF描述 |
|---|---|
| ST1280C06K1 | 4150 A, 600 V, SCR |
| ST173C10CFK1 | 610 A, 1000 V, SCR, TO-200AB |
| ST173C10CFP0 | 610 A, 1000 V, SCR, TO-200AB |
| ST173C10CFP1 | 610 A, 1000 V, SCR, TO-200AB |
| ST173C12CFK0L | 610 A, 1200 V, SCR, TO-200AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST1280C06K0L | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST1280C06K1 | 制造商:Vishay Intertechnologies 功能描述:Thyristor SCR 600V 2310 A A-24 |
| ST1280C06K1L | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 2310 A |
| ST1280C06K2 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 2310 A |
| ST1280C06K2L | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Phase Control Thyristors (Hockey PUK Version), 2310 A |
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