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参数资料
| 型号： | ST1280C06K3PBF |
| 元件分类： | 晶闸管 |
| 英文描述： | 4150 A, 600 V, SCR |
| 封装： | KPUK-2 |
| 文件页数： | 2/7页 |
| 文件大小： | 87K |
| 代理商： | ST1280C06K3PBF |
ST1280C..K Series
2
www.irf.com
Bulletin I25195 rev. B 02/00
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J = TJ max
VV
mA
04
400
500
06
600
700
ELECTRICAL SPECIFICATIONS
Voltage Ratings
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
, t
r ≤
1s
of turned-on current
T
J
= T
J
max, anode voltage
≤ 80% V
DRM
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM = 550A, TJ = T J max, di/dt = 40A/s , VR = 50V
dv/dt = 20V/s, Gate 0V 100
, t
p
= 500s
Parameter
ST1280C..K
Units Conditions
Switching
1000
A/s
t
d
Typical delay time
1.9
t
q
Typical turn-off time
200
s
ST1280C..K
100
I
T(AV)
Max. average on-state current
2310 (885)
A
180° conduction, half sine wave
@ Heatsink temperature
55 (85)
°C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
4150
@ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
42500
t = 10ms
No voltage
non-repetitive surge current
44500
A
t = 8.3ms
reapplied
35700
t = 10ms
100% V
RRM
37400
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2t
Maximum I
2t for fusing
9027
t = 10ms
No voltage
Initial T
J = TJ max.
8241
t = 8.3ms
reapplied
6383
t = 10ms
100% V
RRM
5828
t = 8.3ms
reapplied
I
2√t
Maximum I
2√t for fusing
90270
KA
2√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.44
V
I
pk
= 8000A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Typical latching current
1000
0.83
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
0.077
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
0.068
(I >
π x I
T(AV)), TJ = TJ max.
Parameter
ST1280C..K
Units Conditions
0.90
(I >
π x I
T(AV)),TJ = TJ max.
On-state Conduction
KA
2s
V
m
mA
T
J = 25° C, anode supply 12V resistive load
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