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参数资料
| 型号： | ST173C12CFJ3LP |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 610 A, 1200 V, SCR, TO-200AB |
| 封装： | LEAD FREE, METAL CASE WITH CERAMIC INSULATOR, APUK-3 |
| 文件页数： | 4/10页 |
| 文件大小： | 294K |
| 代理商： | ST173C12CFJ3LP |
ST173CPbF Series
Bulletin I25233 10/06
V
TM
Max. peak on-state voltage
2.07
I
TM
= 600A, T
J
= T
J
max, t
p
= 10ms sine wave pulse
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t1
Low level value of forward
slope resistance
r
t2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J
= 25°C, I
T
> 30A
I
L
Typical latching current
1000
T
J
= 25°C, V
A
= 12V, Ra = 6
Ω, I
G
= 1A
Parameter
ST173C..C
Units
Conditions
On-state Conduction
1.55
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
1.61
(I >
π x I
T(AV)
), T
J
= T
J
max.
V
0.87
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
0.77
(I >
π x I
T(AV)
), T
J
= T
J
max.
m
Ω
mA
di/dt
Max. non-repetitive rate of rise
T
J
= T
J
max, V
DRM
= rated V
DRM
of turned-on current
I
TM
= 2 x di/dt
T
J= 25°C, V
DM
= rated V
DRM
, I
TM
= 50A DC, t
p
= 1s
Resistive load, Gate pulse: 10V, 5
Ω source
T
J
= T
J
max, I
TM
= 300A, commutating di/dt = 20A/s
V
R
= 50V, t
p
= 500s, dv/dt: see table in device code
Switching
Parameter
ST173C..C
Units
Conditions
1000
A/s
t
d
Typical delay time
1.1
Min
Max
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max. linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST173C..C
Units
Conditions
Blocking
500
V/
μs
40
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J
= T
J
max, t
p ≤
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST173C..C
Units
Conditions
20
5
VT
J
= T
J
max, t
p ≤
5ms
200
mA
3V
T
J
= 25°C, V
A
= 12V, Ra = 6
Ω
T
J
= T
J
max, rated V
DRM
applied
t
q
Max. turn-off time
15
3 0
s
WT
J
= T
J
max, f = 50Hz, d% = 50
Document Number: 94366
www.vishay.com
3
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ST173C12CFJ3P | 制造商:IRF 制造商全称:International Rectifier 功能描述:INVERTER GRADE THYRISTORS |
| ST173C12CFK0 | 功能描述:SCR INVERTER 1200V 330A A-PUK RoHS:是 类别:分离式半导体产品 >> SCR - 单个 系列:- 其它有关文件:X00619 View All Specifications 产品目录绘图:SCR TO-92 Package 标准包装:1 系列:- SCR 型:灵敏栅极 电压 - 断路:600V 电压 - 栅极触发器 (Vgt)（最大）:800mV 电压 - 导通状态 (Vtm)（最大）:1.35V 电流 - 导通状态 (It (AV))（最大）:500mA 电流 - 导通状态 (It (RMS))（最大）:800mA 电流 - 栅极触发电流 (Igt)（最大）:200µA 电流 - 维持(Ih):5mA 电流 - 断开状态（最大）:1µA 电流 - 非重复电涌，50、60Hz (Itsm):9A，10A 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:TO-226-3、TO-92-3（TO-226AA）成形引线 供应商设备封装:TO-92-3 包装:剪切带 (CT) 产品目录页面:1554 (CN2011-ZH PDF) 其它名称:497-9067-1 |
| ST173C12CFK0L | 功能描述:SCR模块 330 Amp 1200 Volt 610 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| ST173C12CFK0LP | 制造商:IRF 制造商全称:International Rectifier 功能描述:INVERTER GRADE THYRISTORS |
| ST173C12CFK0P | 制造商:IRF 制造商全称:International Rectifier 功能描述:INVERTER GRADE THYRISTORS |
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