参数资料
型号: ST173C12CFP0P
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 晶闸管
英文描述: 610 A, 1200 V, SCR, TO-200AB
封装: LEAD FREE, METAL CASE WITH CERAMIC INSULATOR, APUK-3
文件页数: 2/9页
文件大小: 125K
代理商: ST173C12CFP0P
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 94366
2
Revision: 29-Apr-08
ST173CPBF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 330 A
CURRENT CARRYING CAPABILITY
FREQUENCY
UNITS
50 Hz
760
660
1200
1030
5570
4920
A
400 Hz
730
590
1260
1080
2800
2460
1000 Hz
600
490
1200
1030
1620
1390
2500 Hz
350
270
850
720
800
680
Recovery voltage Vr
50
V
Voltage before turn-on Vd
VDRM
Rise of on-state current dI/dt
50
-
A/s
Heatsink temperature
40
55
40
55
40
55
°C
Equivalent values for RC circuit
47/0.22
Ω/F
ON-STATE CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at heatsink temperature
IT(AV)
180° conduction, half sine wave
double side (single side) cooled
330 (120)
A
55 (85)
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
610
A
Maximum peak, one half cycle,
non-repetitive surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
4680
t = 8.3 ms
4900
t = 10 ms
100 % VRRM
reapplied
3940
t = 8.3 ms
4120
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
110
kA2s
t = 8.3 ms
100
t = 10 ms
100 % VRRM
reapplied
77
t = 8.3 ms
71
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
1100
kA2
√s
Maximum peak on-state voltage
VTM
ITM = 600 A, TJ = TJ maximum,
tp = 10 ms sine wave pulse
2.07
V
Low level value of threshold voltage
VT(TO)1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
1.55
High level value of threshold voltage
VT(TO)2
(I >
π x I
T(AV)), TJ = TJ maximum
1.61
Low level value of forward slope resistance
rt1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.87
m
Ω
High level value of forward slope resistance
rt2
(I >
π x I
T(AV)), TJ = TJ maximum
0.77
Maximum holding current
IH
TJ = 25 °C, IT > 30 A
600
mA
Typical latching current
IL
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate
of rise of turned on current
dI/dt
TJ = TJ maximum, VDRM = Rated VDRM, ITM = 2 x dI/dt
1000
A/s
Typical delay time
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s
Resistive load, gate pulse: 10 V, 5
Ω source
1.1
s
Maximum turn-off time
minimum
tq
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/s
VR = 50 V, tp = 500 s, dV/dt: See table in device code
15
maximum
30
180° el
I
TM
180° el
I
TM
100 s
I
TM
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