参数资料
型号: ST173C12CHJ3PBF
元件分类: 晶闸管
英文描述: 610 A, 1200 V, SCR, TO-200AB
封装: METAL CASE WITH CERAMIC INSULATOR, APUK-3
文件页数: 8/9页
文件大小: 175K
代理商: ST173C12CHJ3PBF
ST173C..C Series
8
Bulletin I25180 rev. B 04/00
www.irf.com
Fig. 16 - Maximum On-state Energy Power Loss Characteristics
Fig. 15 - Frequency Characteristics
Fig. 14 - Frequency Characteristics
1E 1
1E 2
1E 3
1E 4
1E 1
1 E 2
1E 3
1 E 4
50 H z
400
2500
10 0
Pu lse B a se w id t h ( s)
P
e
a
k
O
n
-s
ta
te
C
u
rr
e
n
t(
A
)
10 00
15 00
3000
20 0
500
5 000
ST17 3C ..C Se ries
Tra p e zoid a l p uls e
T
= 40°C
d i/d t = 100A/s
C
Sn ubbe r c irc uit
R
= 4 7 o hm s
C
= 0 .22 F
V
= 8 0% V
s
D
DRM
tp
10 00 0
1E 4
1E 1
1 E 2
1E 3
1 E 4
50 H z
40 0
2500
100
P u lse B ase w id t h ( s)
1 000
1500
20 0
500
ST173C..C Series
Tra p ezo id a l p u ls e
T
= 55°C
d i/d t = 10 0A /s
C
3000
Snub b e r c irc uit
R
= 47 o hm s
C
= 0 .22 F
V
= 8 0% V
s
D
DRM
tp
5000
10 00 0
1E 1
1 E 1
1 E2
1 E 3
1 E4
50 H z
400
2500
100
P ulse B a se w idt h ( s)
10 00
1500
2000
200
500
ST17 3C. .C Se ries
Tra p ezo id a l p uls e
T
= 5 5°C
di/d t = 5 0A/s
C
Snub b er c ircuit
R
= 47 o hm s
C
= 0 .22 F
V
= 8 0% V
s
D
DRM
tp
3000
5000
1E 1
1E 2
1E 3
1E 4
1 E 11 E 2
1 E 31 E 4
50 H z
400
2500
100
1000
1500
2000
30 00
200
50 0
Pu lse B a se w id th ( s)
P
e
a
k
O
n
-s
ta
te
C
u
rr
e
n
t
(A
)
ST173 C. .C Se ries
Tra p ezo id a l p uls e
T
= 40 °C
di/d t = 5 0A/s
C
Snu bbe r c irc uit
R
= 47 o hm s
C
= 0 .22 F
V
= 8 0% V
s
D
DRM
tp
5000
1E 4
1 E 1
1 E2
1 E 3
1 E4
P u lse Ba se w id th ( s)
20 jo ules pe r pulse
1
0.5
0.3
0.2
0.1
ST1 73 C..C Serie s
Rec ta ngula r p ulse
di/d t = 50 A/s
10
5
3
tp
2
1E 1
1E 2
1E 3
1E 4
1E 5
1E 1
1 E 2
1E 3
1 E 4
Pu lse B a se w id th ( s)
20 jo ule s p e r p uls e
2
1
0.5
0.3
0.2
0.1
10
5
P
e
a
kO
n
-s
ta
te
C
u
rr
e
n
t(
A
)
3
ST17 3C ..C Serie s
Sinuso id a l p uls e
tp
1E 4
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