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参数资料
| 型号： | ST180S04P1 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | 314 A, 400 V, SCR, TO-209AB |
| 封装： | HERMETIC SEALED, METAL, TO-93, 3 PIN |
| 文件页数： | 3/8页 |
| 文件大小： | 91K |
| 代理商： | ST180S04P1 |
ST180S Series
3
Bulletin I25165 rev. C 03/03
www.irf.com
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
I
RRM
Max. peak reverse and off-state
leakage current
Blocking
500
V/μs
T
J
= T
J
max linear to 80% rated V
DRM
Parameter
ST180S
Units Conditions
30
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
P
G(AV)
I
GM
+V
GM
Maximum peak gate power
10
T
J
= T
J
max, t
p
≤
5ms
T
J
= T
J
max, f = 50Hz, d% = 50
T
J
= T
J
max, t
p
≤
5ms
Maximum average gate power
2.0
Max. peak positive gate current
3.0
A
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
DC gate current required
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
to trigger
mA
V
GT
DC gate voltage required
to trigger
V
I
GD
DC gate current not to trigger
10
mA
Parameter
ST180S
Units Conditions
20
5.0
Triggering
V
GD
DC gate voltage not to trigger
0.25
V
T
J
= T
J
max
TYP.
MAX.
180
90
40
-
150
-
2.9
1.8
1.2
-
3.0
-
Max. gate current/ voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
W
V
T
J
= T
J
max, t
p
≤
5ms
T
J
T
stg
R
thJC
Max. operating temperature range
-40 to 125
Max. storage temperature range
-40 to 150
Max. thermal resistance,
junction to case
Max. thermal resistance,
R
thCS
case to heatsink
T
Mounting torque, ± 10%
31
(275)
24.5
(210)
wt
Approximate weight
280
g
Case style
TO - 209AB (TO-93)
See Outline Table
Parameter
ST180S
Units
Conditions
0.105
DC operation
0.04
Mounting surface, smooth, flat and greased
Thermal and Mechanical Specification
°C
K/W
Nm
(lbf-in)
Lubricated threads
Non lubricated threads
相关PDF资料 |
PDF描述 |
|---|---|
| ST180S08P1 | 314 A, 800 V, SCR, TO-209AB |
| ST180S12P0 | 314 A, 1200 V, SCR, TO-209AB |
| ST180S12P1 | 314 A, 1200 V, SCR, TO-209AB |
| ST230S12P0 | 360 A, 1200 V, SCR, TO-209AB |
| ST230S12P1 | 360 A, 1200 V, SCR, TO-209AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST180S04P1L | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS Stud Version |
| ST180S04P1V | 功能描述:SCR 200 Amp 400 Volt 314 Amp IT(RMS) RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| ST180S04P1VL | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS Stud Version |
| ST180S04P2 | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS Stud Version |
| ST180S04P2L | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS Stud Version |
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