- 您现在的位置：买卖IC网 > PDF目录195873 > ST183S08PDL0LPBF 306 A, 800 V, SCR, TO-209AB PDF资料下载
参数资料
| 型号： | ST183S08PDL0LPBF |
| 元件分类： | 晶闸管 |
| 英文描述： | 306 A, 800 V, SCR, TO-209AB |
| 文件页数： | 3/9页 |
| 文件大小： | 131K |
| 代理商： | ST183S08PDL0LPBF |
ST183S Series
3
Bulletin I25179 rev. C 12/96
www.irf.com
V
TM
Max. peak on-state voltage
1.80
I
TM= 600A, TJ = TJ max, t
p
= 10ms sine wave pulse
V
T(TO)1 Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t1
Low level value of forward
slope resistance
r
t2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J = 25°C, I T > 30A
I
L
Typical latching current
1000
T
J = 25°C, VA= 12V, Ra = 6 , I G= 1A
Parameter
ST183S
Units
Conditions
On-state Conduction
1.40
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
1.45
(I >
π x I
T(AV)
), T
J
= T
J
max.
V
0.67
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
0.58
(I >
π x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J = TJ max, VDRM = rated VDRM
of turned-on current
I
TM = 2 x di/dt
T
J = 25°C, VDM = rated VDRM, ITM = 50A DC, t
p
= 1s
Resistive load, Gate pulse: 10V, 5
source
T
J = TJ max, ITM = 300A, commutating di/dt = 20A/s
V
R = 50V, t
p
= 500s, dv/dt: see table in device code
Switching
Parameter
ST183S
Units
Conditions
1000
A/s
t
d
Typical delay time
1.1
Min
Max
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max., linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST183S
Units
Conditions
Blocking
500
V/
s
40
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J = TJ max, t
p ≤
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST183S
Units
Conditions
20
5
VT
J = TJ max, t
p ≤
5ms
200
mA
3V
T
J = TJ max, VA = 12V, Ra = 6
T
J
= T
J
max, rated V
DRM
applied
t
q
Max. turn-off time
10
20
s
WT
J
= T
J
max, f = 50Hz, d% = 50
相关PDF资料 |
PDF描述 |
|---|---|
| ST183S08PDL1PBF | 306 A, 800 V, SCR, TO-209AB |
| ST183S08PDL1LPBF | 306 A, 800 V, SCR, TO-209AB |
| ST183S08PDL2PBF | 306 A, 800 V, SCR, TO-209AB |
| ST183S08PDL2LPBF | 306 A, 800 V, SCR, TO-209AB |
| ST183S08PDM0LPBF | 306 A, 800 V, SCR, TO-209AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST183S08PFL0 | 功能描述:SCR 800 Volt 195 Amp RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| ST183S08PFL1 | 功能描述:SCR 195 Amp 800 Volt 306 Amp IT(RMS) RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| ST183S08PFN0 | 制造商:n/a 功能描述:Power SCR |
| ST183S08PFN1 | 功能描述:SCR 195 Amp 800 Volt 306 Amp IT(RMS) RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| ST18-4-00 | 功能描述:焊料和屏蔽管 RoHS:否 制造商:TE Connectivity / Raychem 类型:Shield Terminators 材料:Polyvinylidene Fluoride 内径:5.08 mm 长度:16.5 mm 最低收缩温度: 系列:S03 |
发布紧急采购，3分钟左右您将得到回复。