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参数资料
| 型号： | ST223C08CHJ1PBF |
| 元件分类： | 晶闸管 |
| 英文描述： | 745 A, 800 V, SCR, TO-200AB |
| 封装： | METAL CASE WITH CERAMIC INSULATOR, APUK-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 171K |
| 代理商： | ST223C08CHJ1PBF |
ST223C..C Series
3
www.irf.com
Bulletin I25174 rev. B 04/00
V
TM
Max. peak on-state voltage
1.58
I
TM= 600A, TJ = TJ max, t
p
= 10ms sine wave pulse
V
T(TO)1 Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t1
Low level value of forward
slope resistance
r
t2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J
= 25°C, I
T
> 30A
I
L
Typical latching current
1000
T
J
= 25°C, V
A
= 12V, Ra = 6
, I
G
= 1A
Parameter
ST223C..C
Units
Conditions
On-state Conduction
1.05
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
1.09
(I >
π x I
T(AV)
), T
J
= T
J
max.
V
0.88
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
0.82
(I >
π x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J = TJ max, VDRM = rated VDRM
of turned-on current
ITM = 2 x di/dt
T
J= 25°C, V
DM = rated VDRM, ITM = 50A DC, t
p
= 1s
Resistive load, Gate pulse: 10V, 5
source
T
J = TJ max, ITM = 300A, commutating di/dt = 20A/s
V
R = 50V, t
p
= 500s, dv/dt: see table in device code
Switching
Parameter
ST223C..C
Units
Conditions
1000
A/s
t
d
Typical delay time
0.78
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max. linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST223C..C
Units
Conditions
Blocking
500
V/
s
40
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J = TJ max, tp ≤ 5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST223C..C
Units
Conditions
20
5
VT
J = TJ max, t
p ≤
5ms
200
mA
3V
T
J = 25°C, V A = 12V, Ra = 6
T
J
= T
J
max, rated V
DRM
applied
10
30
s
WT
J = TJ max, f = 50Hz, d% = 50
t
q
Max. turn-off time
Min
Max
相关PDF资料 |
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|---|---|
| ST223C08CHJ1LPBF | 745 A, 800 V, SCR, TO-200AB |
| ST223C04CFP2L | 745 A, 400 V, SCR, TO-200AB |
| ST223C04CFL1L | 745 A, 400 V, SCR, TO-200AB |
| ST223C04CFL1 | 745 A, 400 V, SCR, TO-200AB |
| ST223C04CFL2L | 745 A, 400 V, SCR, TO-200AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST223C08CHK0 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 390 A |
| ST223C08CHK0L | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 390 A |
| ST223C08CHK1 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 390 A |
| ST223C08CHK1L | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 390 A |
| ST223C08CHK2 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Inverter Grade Thyristors (Hockey PUK Version), 390 A |
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