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参数资料
| 型号： | ST230S12P1 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 晶闸管 |
| 英文描述： | 360 A, 1200 V, SCR, TO-209AB |
| 封装： | HERMETIC SEALED, METAL, TO-93, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 89K |
| 代理商： | ST230S12P1 |
ST230S Series
2
Bulletin I25163 rev. C 03/03
www.irf.com
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
400
800
1200
1600
V
RSM
, maximum non-
repetitive peak voltage
V
500
900
1300
1700
I
DRM
/I
RRM
max.
@ T
J
= T
J
max
mA
Type number
04
08
12
16
ST230S
30
I
T(AV)
Max. average on-state current
@ Case temperature
230
85
A
°C
180° conduction, half sine wave
I
T(RMS)
Max. RMS on-state current
I
TSM
non-repetitive surge current
360
A
DC @ 78°C case temperature
Max. peak, one-cycle
5700
t = 10ms
No voltage
5970
t = 8.3ms
reapplied
4800
t = 10ms
100% V
RRM
reapplied
5000
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
163
t = 10ms
No voltage
Initial T
J
= T
J
max.
148
t = 8.3ms
reapplied
115
t = 10ms
100% V
RRM
reapplied
105
t = 8.3ms
I
2
√
t
Maximum I
2
√
t for fusing
1630
KA
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t
1
Low level value of on-state
slope resistance
r
t
2
High level value of on-state
slope resistance
V
TM
I
H
I
L
Max. on-state voltage
1.55
V
I
pk
= 720A, T
J
= T
J
max, t
p
= 10ms sine pulse
Maximum holding current
600
Max. (typical) latching current
1000 (300)
0.92
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.88
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
0.81
(I >
π
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST230S
Units Conditions
0.98
(I >
π
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= 25°C, anode supply 12V resistive load
A
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20
, t
≤
1μs
T
J
= T
J
max, anode voltage
≤
80% V
DRM
Gate current 1A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
,
T
J
= 25°C
I
TM
= 300A, T
J
= T
J
max, di/dt
= 20A/μs, V
R
= 50V
dv/dt
= 20V/μs, Gate 0V 100
,
t
p
= 500μs
Parameter
ST230S
Units Conditions
1000
A/μs
Switching
t
q
Typical turn-off time
100
μs
t
d
Typical delay time
1.0
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| ST230S12P1VPBF | 制造商:Vishay Semiconductors 功能描述:THYRISTOR 230A 1200V TO-93 制造商:Vishay Intertechnologies 功能描述:Thyristor,ST230S12P1V 360A 1200V |
| ST230S14P0 | 功能描述:SCR 1400 Volt 230 Amp RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
| ST230S16P0 | 功能描述:SCR 1600 Volt 230 Amp RoHS:否 制造商:STMicroelectronics 最大转折电流 IBO:480 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态 RMS 电流 (It RMS): 正向电压下降:1.6 V 栅触发电压 (Vgt):1.3 V 最大栅极峰值反向电压:5 V 栅触发电流 (Igt):35 mA 保持电流（Ih 最大值）:75 mA 安装风格:Through Hole 封装 / 箱体:TO-220 封装:Tube |
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