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参数资料
| 型号： | ST2600C20R1LPBF |
| 元件分类： | 晶闸管 |
| 英文描述： | 4800 A, 2000 V, SCR |
| 封装： | RPUK-2 |
| 文件页数： | 2/6页 |
| 文件大小： | 70K |
| 代理商： | ST2600C20R1LPBF |
ST2600C..R Series
2
Bulletin I25199 rev. B 02/00
www.irf.com
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
C
= 125°C
VV
mA
20
2000
2100
22
2200
2300
24
2400
2500
26
2600
2700
28
2800
2900
30
3000
3100
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Parameter
ST2600C..R
Units Conditions
Switching
di/dt
Max. repetitive 50Hz (no repetitive)
From 67% V
DRM gate drive 20V, 20, t
r =
1s
rate of rise of turned-on current
T
J = TJ max.
Gate drive 30V, 15
, V
d
= 67% V
DRM, TJ = 25°C
Rise time 0.5s
I
T
= 800A, t
p
= 1ms, T
J
= T
J
max, V
RM
= 50V,
dI
RR
/dt = 20A/s, V
DR
=67% V
DRM
, dV/dt = 20V/s linear
150 (300)
A/s
s
t
q
Typical turn-off time
400
t
d
Maximum delay time
2.0
I
T(AV)
Max. average on-state current
2220 (1440)
A
@ Case temperature
80
°C
I
T(AV)
Max. average on-state current
2630 (1160)
A
@ Heatsink temperature
55 (85)
°C
I
T(RMS) Max. RMS on-state current
4800
A
DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
No voltage
non-repetitive surge current
reapplied
50% V
RRM
reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
No voltage
Initial T
C = 125°C
reapplied
50% V
RRM
reapplied
V
T(TO)
Max. value of threshold voltage
0.89
V
T
J
= T
J
max.
r
t
Max. value of on-state slope
resistance
V
TM
Max. on-state voltage
1.45
V
I
pk
= 2900A, T
C
= 25°C
I
L
Max. (typical) latching current
300 (100)
mA
T
J = 25° C, VD = 5V
Parameter
ST2600C..R
Units
Conditions
On-state Conduction
A
KA
2s
m
180° conduction, half sine wave
double side (single side [anode side]) cooled
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
46000
48200
36800
38500
10580
9640
6770
6150
ST2600C..R
250
0.19
T
J = TJ max.
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