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参数资料
| 型号： | ST2600C20R3 |
| 元件分类： | 晶闸管 |
| 英文描述： | 4800 A, 2000 V, SCR |
| 封装： | RPUK-2 |
| 文件页数： | 3/6页 |
| 文件大小： | 70K |
| 代理商： | ST2600C20R3 |
ST2600C..R Series
3
Bulletin I25199 rev. B 02/00
www.irf.com
dv/dt
Maximum linear rate of rise of
off-state voltage
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Blocking
500
V/s
T
J = TJ max. to 67% rated VDRM
Parameter
ST2600C..R
Units
Conditions
250
mA
T
J = 125°C rated VDRM /V RRM applied
Triggering
P
GM
Maximum peak gate power
150
t
p
= 100s
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
30
A
Anode positive with respect to cathode
V
GM
Max. peak positive gate voltage
30
V
Anode positive with respect to cathode
-V
GM
Max. peak negative gate voltage
0.25
V
Anode negative with respect to cathode
I
GT
Maximum DC gate current
required to trigger
V
GT
Maximum gate voltage required
to trigger
Parameter
ST2600C..R
Units
Conditions
W
400
mA
T
C
= 25°C, V
DRM
= 5V
4V
T
C
= 25°C, V
DRM
= 5V
V
GD
DC gate voltage not to trigger
0.25
V
T
C = 125°C
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
180°
0.0010
T
J
= T
J
max.
120°
0.0017
K/W
60°
0.0044
R
thJ-C
Conduction
(The following table shows the increment of thermal resistence R
thJ-C
when devices operate at different conduction angles than DC)
Conduction angle
Single side
Double side
Units
Conditions
T
J
max. Max. operating temperature
125
On-state (conducting)
T
stg
Max. storage temperature range
-55 to 125
R
thJ-C
Thermal resistance, junction
0.019
DC operation single side cooled
to case
0.0095
DC operation double side cooled
R
th(C-h)
Thermal resistance, case
0.004
Single side cooled
to heatsink
0.002
Double side cooled
F
Mounting force ± 10%
wt
Approximate weight
1600
g
Case style
(R-PUK)
See Outline Table
Parameter
ST2600C..R
Units
Conditions
Thermal and Mechanical Specification
°C
Clamping force 43KN with
mounting compound
43000
(4400)
N
(Kg)
K/W
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