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参数资料
| 型号： | ST303C08CDM0L |
| 元件分类： | 晶闸管 |
| 英文描述： | 1180 A, 800 V, SCR, TO-200AB |
| 封装： | METAL CASE WITH CERAMIC INSULATOR, EPUK-3 |
| 文件页数： | 3/9页 |
| 文件大小： | 0K |
| 代理商： | ST303C08CDM0L |
ST303C..C Series
3
www.irf.com
Bulletin I25172 rev. B 04/00
V
TM
Max. peak on-state voltage
2.16
I
TM= 1255A, TJ = TJ max, t
p
= 10ms sine wave pulse
V
T(TO)1 Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t1
Low level value of forward
slope resistance
r
t2
High level value of forward
slope resistance
I
H
Maximum holding current
600
T
J
= 25°C, I
T
> 30A
I
L
Typical latching current
1000
T
J
= 25°C, V
A
= 12V, Ra = 6
, I
G
= 1A
Parameter
ST303C..C
Units
Conditions
On-state Conduction
1.44
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
V
0.56
(I >
π x I
T(AV)
), T
J
= T
J
max.
m
mA
di/dt
Max. non-repetitive rate of rise
T
J = TJ max, VDRM = rated VDRM
of turned-on current
I
TM = 2 x di/dt
T
J= 25°C, V
DM = rated VDRM, ITM = 50A DC, t
p
= 1s
Resistive load, Gate pulse: 10V, 5
source
T
J = TJ max, ITM = 550A, commutating di/dt = 40A/s
V
R = 50V, t
p
= 500s, dv/dt: see table in device code
Switching
Parameter
ST303C..C
Units
Conditions
1000
A/s
t
d
Typical delay time
0.83
Min
Max
dv/dt
Maximum critical rate of rise of
T
J
= T
J
max. linear to 80% V
DRM
, higher value
off-state voltage
available on request
I
RRM
Max. peak reverse and off-state
I
DRM
leakage current
Parameter
ST303C..C
Units
Conditions
Blocking
500
V/
s
50
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
60
P
G(AV)
Maximum average gate power
10
I
GM
Max. peak positive gate current
10
A
T
J = TJ max, t
p ≤
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
I
GT
Max. DC gate current required
to trigger
V
GT
Max. DC gate voltage required
to trigger
I
GD
Max. DC gate current not to trigger
20
mA
V
GD
Max. DC gate voltage not to trigger
0.25
V
Triggering
Parameter
ST303C..C
Units
Conditions
20
5
VT
J = TJ max, t
p ≤
5ms
200
mA
3V
s
t
q
Max. turn-off time (*)
10
30
WT
J
= T
J
max, f = 50Hz, d% = 50
(*) t
q
= 10 to 20s for 400 to 800V devices; t
q
= 15 to 30s for 1000 to 1200V devices.
1.48
(I >
π x I
T(AV)
), T
J
= T
J
max.
0.57
(16.7% x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ max.
T
J
= T
J
max, rated V
DRM
applied
T
J
= 25°C, V
A
= 12V, Ra = 6
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ST303C08CFL0 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:800V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package |
| ST303C08CFN0 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:800V 1180A Inverter Thyristor in a TO-200AB (E-Puk) package |
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| ST303C08LFN0 | 功能描述:SCR PHASE CONT 800V 515A B-PUK RoHS:是 类别:分离式半导体产品 >> SCR - 单个 系列:- 其它有关文件:X00619 View All Specifications 产品目录绘图:SCR TO-92 Package 标准包装:1 系列:- SCR 型:灵敏栅极 电压 - 断路:600V 电压 - 栅极触发器 (Vgt)（最大）:800mV 电压 - 导通状态 (Vtm)（最大）:1.35V 电流 - 导通状态 (It (AV))（最大）:500mA 电流 - 导通状态 (It (RMS))（最大）:800mA 电流 - 栅极触发电流 (Igt)（最大）:200µA 电流 - 维持(Ih):5mA 电流 - 断开状态（最大）:1µA 电流 - 非重复电涌，50、60Hz (Itsm):9A，10A 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:TO-226-3、TO-92-3（TO-226AA）成形引线 供应商设备封装:TO-92-3 包装:剪切带 (CT) 产品目录页面:1554 (CN2011-ZH PDF) 其它名称:497-9067-1 |
| ST303C10CCL0L | 制造商:n/a 功能描述:Power SCR |
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