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参数资料
| 型号： | ST330C12C2L |
| 元件分类： | 晶闸管 |
| 英文描述： | 1420 A, 1200 V, SCR, TO-200AB |
| 封装： | METAL, EPUK-4 |
| 文件页数： | 2/8页 |
| 文件大小： | 84K |
| 代理商： | ST330C12C2L |
ST330C..C Series
2
Bulletin I25155 rev. D 04/03
www.irf.com
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
, t
r ≤
1s
of turned-on current
T
J
= T
J
max, anode voltage
≤ 80% V
DRM
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM
= 550A, T
J
= T
J
max, di/dt = 40A/s, V
R
= 50V
dv/dt = 20V/s, Gate 0V 100
, t
p
= 500s
Parameter
ST330C..C
Units Conditions
Switching
1000
A/s
t
d
Typical delay time
1.0
t
q
Typical turn-off time
100
s
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= T
J
max
VV
mA
04
400
500
08
800
900
ST330C..C
12
1200
1300
50
14
1400
1500
16
1600
1700
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
T(AV)
Max. average on-state current
720 (350)
A
180° conduction, half sine wave
@ Heatsink temperature
55 (75)
°C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
1420
DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
9000
t = 10ms
No voltage
non-repetitive surge current
9420
A
t = 8.3ms
reapplied
7570
t = 10ms
100% V
RRM
7920
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2t
Maximum I
2t for fusing
405
t = 10ms
No voltage
Initial T
J
= T
J
max.
370
t = 8.3ms
reapplied
287
t = 10ms
100% V
RRM
262
t = 8.3ms
reapplied
I
2
√t
Maximum I
2
√t for fusing
4050
KA
2
√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)
1
Low level value of threshold
voltage
V
T(TO)2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.96
V
I
pk
= 1810A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Typical latching current
1000
0.91
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
0.58
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
0.57
(I >
π x I
T(AV)
),T
J
= T
J
max.
Parameter
ST330C..C
Units Conditions
0.92
(I >
π x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2s
V
m
mA
T
J
= 25°C, anode supply 12V resistive load
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|---|---|
| ST330C12C2 | 1420 A, 1200 V, SCR, TO-200AB |
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| ST330C12C3 | 1420 A, 1200 V, SCR, TO-200AB |
| ST330C14C2L | 1420 A, 1400 V, SCR, TO-200AB |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ST330C12C3 | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST330C12C3L | 制造商:IRF 制造商全称:International Rectifier 功能描述:PHASE CONTROL THYRISTORS |
| ST330C12L0 | 功能描述:SCR PHASE CONT 1200V 650A B-PUK RoHS:是 类别:分离式半导体产品 >> SCR - 单个 系列:- 其它有关文件:X00619 View All Specifications 产品目录绘图:SCR TO-92 Package 标准包装:1 系列:- SCR 型:灵敏栅极 电压 - 断路:600V 电压 - 栅极触发器 (Vgt)（最大）:800mV 电压 - 导通状态 (Vtm)（最大）:1.35V 电流 - 导通状态 (It (AV))（最大）:500mA 电流 - 导通状态 (It (RMS))（最大）:800mA 电流 - 栅极触发电流 (Igt)（最大）:200µA 电流 - 维持(Ih):5mA 电流 - 断开状态（最大）:1µA 电流 - 非重复电涌，50、60Hz (Itsm):9A，10A 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:TO-226-3、TO-92-3（TO-226AA）成形引线 供应商设备封装:TO-92-3 包装:剪切带 (CT) 产品目录页面:1554 (CN2011-ZH PDF) 其它名称:497-9067-1 |
| ST330C12L0L | 功能描述:SCR模块 650 Amp 1200 Volt 1230 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| ST330C14C | 制造商:n/a 功能描述:Power SCR |
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