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参数资料
| 型号： | ST330C12L0LPBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 1230 A, 1200 V, SCR, TO-200AC |
| 封装： | LEAD FREE, METAL, BPUK-4 |
| 文件页数： | 3/8页 |
| 文件大小： | 161K |
| 代理商： | ST330C12L0LPBF |
Document Number: 94408
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 16-Oct-08
3
ST330CLPbF Series
Phase Control Thyristors
(Hockey PUK Version), 650 A
Vishay High Power Products
Note
The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
TYP.
MAX.
Maximum peak gate power
PGM
TJ = TJ maximum, tp ≤ 5 ms
10.0
W
Maximum average gate power
PG(AV)
TJ = TJ maximum, f = 50 Hz, d% = 50
2.0
Maximum peak positive gate current
IGM
TJ = TJ maximum, tp ≤ 5 ms
3.0
A
Maximum peak positive gate voltage
+ VGM
TJ = TJ maximum, tp ≤ 5 ms
20
V
Maximum peak negative gate voltage
- VGM
5.0
DC gate current required to trigger
IGT
TJ = - 40 °C
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200
-
mA
TJ = 25 °C
100
200
TJ = 125 °C
50
-
DC gate voltage required to trigger
VGT
TJ = - 40 °C
2.5
-
V
TJ = 25 °C
1.8
3.0
TJ = 125 °C
1.1
-
DC gate current not to trigger
IGD
TJ = TJ maximum
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated VDRM anode to
cathode applied
10
mA
DC gate voltage not to trigger
VGD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance, junction to heatsink
RthJ-hs
DC operation single side cooled
0.11
K/W
DC operation double side cooled
0.06
Maximum thermal resistance, case to heatsink
RthC-hs
DC operation single side cooled
0.011
DC operation double side cooled
0.005
Mounting force, ± 10 %
9800
(1000)
N
(kg)
Approximate weight
250
g
Case style
See dimensions - link at the end of datasheet
TO-200AC (B-PUK)
ΔR
thJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
SINGLE SIDE
DOUBLE SIDE
SINGLE SIDE
DOUBLE SIDE
180°
0.012
0.010
0.008
TJ = TJ maximum
K/W
120°
0.014
0.015
0.014
90°
0.018
0.019
60°
0.026
0.027
0.028
30°
0.045
0.046
相关PDF资料 |
PDF描述 |
|---|---|
| ST330C12L0PBF | 1230 A, 1200 V, SCR, TO-200AC |
| ST330C12L1LPBF | 1230 A, 1200 V, SCR, TO-200AC |
| ST330C12L1PBF | 1230 A, 1200 V, SCR, TO-200AC |
| ST330C12L2LPBF | 1230 A, 1200 V, SCR, TO-200AC |
| ST330C12L2PBF | 1230 A, 1200 V, SCR, TO-200AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST330C14C | 制造商:n/a 功能描述:Power SCR |
| ST330C14C0 | 功能描述:SCR PHASE CONT 1400V 720A A-PUK RoHS:是 类别:分离式半导体产品 >> SCR - 单个 系列:- 其它有关文件:X00619 View All Specifications 产品目录绘图:SCR TO-92 Package 标准包装:1 系列:- SCR 型:灵敏栅极 电压 - 断路:600V 电压 - 栅极触发器 (Vgt)（最大）:800mV 电压 - 导通状态 (Vtm)（最大）:1.35V 电流 - 导通状态 (It (AV))（最大）:500mA 电流 - 导通状态 (It (RMS))（最大）:800mA 电流 - 栅极触发电流 (Igt)（最大）:200µA 电流 - 维持(Ih):5mA 电流 - 断开状态（最大）:1µA 电流 - 非重复电涌，50、60Hz (Itsm):9A，10A 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:TO-226-3、TO-92-3（TO-226AA）成形引线 供应商设备封装:TO-92-3 包装:剪切带 (CT) 产品目录页面:1554 (CN2011-ZH PDF) 其它名称:497-9067-1 |
| ST330C14C0 | 制造商:Vishay Semiconductors 功能描述:SCR THYRISTOR |
| ST330C14C0L | 功能描述:SCR模块 720 Amp 1400 Volt 1420 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| ST330C14C1 | 制造商:n/a 功能描述:Power SCR |
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