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参数资料
| 型号： | ST330C12L2 |
| 元件分类： | 晶闸管 |
| 英文描述： | 1230 A, 1200 V, SCR, TO-200AC |
| 封装： | METAL, BPUK-4 |
| 文件页数： | 2/8页 |
| 文件大小： | 83K |
| 代理商： | ST330C12L2 |
ST330C..L Series
2
Bulletin I25154 rev. D 04/03
www.irf.com
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
, t
r ≤
1s
of turned-on current
T
J
= T
J
max, anode voltage
≤ 80% V
DRM
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
, T
J
= 25°C
I
TM
= 550A, T
J
= T
J
max, di/dt = 40A/s, V
R
= 50V
dv/dt = 20V/s, Gate 0V 100
, t
p
= 500s
Parameter
ST330C..L
Units Conditions
Switching
1000
A/s
t
d
Typical delay time
1.0
t
q
Typical turn-off time
100
s
I
T(AV)
Max. average on-state current
650 (314)
A
180° conduction, half sine wave
@ Heatsink temperature
55 (75)
°C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
1230
DC @ 25°C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
9000
t = 10ms
No voltage
non-repetitive surge current
9420
A
t = 8.3ms
reapplied
7570
t = 10ms
100% V
RRM
7920
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2t
Maximum I
2t for fusing
405
t = 10ms
No voltage
Initial T
J
= T
J
max.
370
t = 8.3ms
reapplied
287
t = 10ms
100% V
RRM
262
t = 8.3ms
reapplied
I
2
√t
Maximum I
2
√t for fusing
4050
KA
2
√s t = 0.1 to 10ms, no voltage reapplied
V
T(TO)
1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.90
V
I
pk
= 1730A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Typical latching current
1000
0.91
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
0.57
(16.7% x
π x I
T(AV)
< I <
π x I
T(AV)
), T
J
= T
J
max.
0.57
(I >
π x I
T(AV)
),T
J
= T
J
max.
Parameter
ST330C..L
Units Conditions
0.93
(I >
π x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2s
V
m
mA
T
J
= 25°C, anode supply 12V resistive load
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= T
J
max
VV
mA
04
400
500
08
800
900
ST2330C..L
12
1200
1300
50
14
1400
1500
16
1600
1700
18
1800
1900
20
2000
2100
ELECTRICAL SPECIFICATIONS
Voltage Ratings
相关PDF资料 |
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|---|---|
| ST330C12L3L | 1230 A, 1200 V, SCR, TO-200AC |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ST330C14C | 制造商:n/a 功能描述:Power SCR |
| ST330C14C0 | 功能描述:SCR PHASE CONT 1400V 720A A-PUK RoHS:是 类别:分离式半导体产品 >> SCR - 单个 系列:- 其它有关文件:X00619 View All Specifications 产品目录绘图:SCR TO-92 Package 标准包装:1 系列:- SCR 型:灵敏栅极 电压 - 断路:600V 电压 - 栅极触发器 (Vgt)（最大）:800mV 电压 - 导通状态 (Vtm)（最大）:1.35V 电流 - 导通状态 (It (AV))（最大）:500mA 电流 - 导通状态 (It (RMS))（最大）:800mA 电流 - 栅极触发电流 (Igt)（最大）:200µA 电流 - 维持(Ih):5mA 电流 - 断开状态（最大）:1µA 电流 - 非重复电涌，50、60Hz (Itsm):9A，10A 工作温度:-40°C ~ 125°C 安装类型:通孔 封装/外壳:TO-226-3、TO-92-3（TO-226AA）成形引线 供应商设备封装:TO-92-3 包装:剪切带 (CT) 产品目录页面:1554 (CN2011-ZH PDF) 其它名称:497-9067-1 |
| ST330C14C0 | 制造商:Vishay Semiconductors 功能描述:SCR THYRISTOR |
| ST330C14C0L | 功能描述:SCR模块 720 Amp 1400 Volt 1420 Amp IT(RMS) RoHS:否 制造商:Vishay Semiconductors 开启状态 RMS 电流 (It RMS):260 A 不重复通态电流:4000 A 最大转折电流 IBO:4200 A 额定重复关闭状态电压 VDRM:1.6 kV 关闭状态漏泄电流（在 VDRM IDRM 下）:20 mA 开启状态电压:1.43 V 保持电流（Ih 最大值）: 栅触发电压 (Vgt): 栅触发电流 (Igt): 最大工作温度:+ 150 C 安装风格:Chassis 封装 / 箱体:INT-A-PAK |
| ST330C14C1 | 制造商:n/a 功能描述:Power SCR |
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