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参数资料
| 型号： | ST330C16L3PBF |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 1230 A, 1600 V, SCR, TO-200AC |
| 封装： | LEAD FREE, METAL, BPUK-4 |
| 文件页数： | 2/8页 |
| 文件大小： | 161K |
| 代理商： | ST330C16L3PBF |
www.vishay.com
For technical questions, contact: ind-modules@vishay.com
Document Number: 94408
2
Revision: 16-Oct-08
ST330CLPbF Series
Vishay High Power Products
Phase Control Thyristors
(Hockey PUK Version), 650 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum average on-state current
at heatsink temperature
IT(AV)
180° conduction, half sine wave
double side (single side) cooled
650 (314)
A
55 (75)
°C
Maximum RMS on-state current
IT(RMS)
DC at 25 °C heatsink temperature double side cooled
1230
A
Maximum peak, one-cycle
non-repetitive surge current
ITSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
9000
t = 8.3 ms
9420
t = 10 ms
100 % VRRM
reapplied
7570
t = 8.3 ms
7920
Maximum I2t for fusing
I2t
t = 10 ms
No voltage
reapplied
405
kA2s
t = 8.3 ms
370
t = 10 ms
100 % VRRM
reapplied
287
t = 8.3 ms
262
Maximum I2
√t for fusing
I2
√t
t = 0.1 to 10 ms, no voltage reapplied
4050
kA2
√s
Low level value of threshold voltage
VT(TO)1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.91
V
High level value of threshold voltage
VT(TO)2
(I >
π x I
T(AV)), TJ = TJ maximum
0.93
Low level value of on-state slope resistance
rt1
(16.7 % x
π x I
T(AV) < I < π x IT(AV)), TJ = TJ maximum
0.57
m
Ω
High level value of on-state slope resistance
rt2
(I >
π x I
T(AV)), TJ = TJ maximum
0.57
Maximum on-state voltage
VTM
Ipk = 1730 A, TJ = TJ maximum, tp = 10 ms sine pulse
1.90
V
Maximum holding current
IH
TJ = 25 °C, anode supply 12 V resistive load
600
mA
Typical latching current
IL
1000
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned-on current
dI/dt
Gate drive 20 V, 20
Ω, t
r ≤ 1 s
TJ = TJ maximum, anode voltage ≤ 80 % VDRM
1000
A/s
Typical delay time
td
Gate current 1 A, dIg/dt = 1 A/s
Vd = 0.67 % VDRM, TJ = 25 °C
1.0
s
Typical turn-off time
tq
ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s,
VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 Ω, tp = 500 s
100
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum linear to 80 % rated VDRM
500
V/s
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
50
mA
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