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参数资料
| 型号： | ST52F510G3B6 |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PDIP28 |
| 封装： | PLASTIC, DIP-28 |
| 文件页数： | 32/106页 |
| 文件大小： | 1340K |
| 代理商： | ST52F510G3B6 |
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4 MEMORY PROGRAMMING
ST52F510/F513/F514 provides an on-chip user
programmable non-volatile memory, which allows
fast and reliable storage of user data.
Program/Data
Memory
addressing
space
is
composed by a Single Voltage Flash Memory and
a RAM memory bench. The ST52F513/514
devices also have a Data EEPROM bench to store
permanent data with long term retention and a high
number of write/erase cycles.
All the Program Data memory addresses can
execute code, including RAM and EEPROM
benches.
The memory is programmed by setting the Vpp pin
equal to Vdd. Data and commands are transmitted
through the I2C serial communication protocol. The
same procedure is used to perform “In-Situ” the
programming of the device after it is mounted in
the user system. Data can also be written in run-
time with the In-Application Programming (IAP).
The Memory can be locked by the user during the
programming phase, in order to prevent external
operation such as reading the program code and
assuring protection of user intellectual property.
Flash and EEPROM pages can be protected by
unintentional writings.
Remark: the memory contents are protected by
the Error Correction Code (ECC) algorithm that
uses a 4-bit redundancy to correct one bit errors.
Warning: when entering the ISP, the default
values for Option Bytes are considered, so a
Voltage Supply higher than the PLVD lower
threshold must be applied to program the device.
4.1 Program/Data Memory Organization
The Program/Data Memory is organized as
described in Section 3.3. The various sales types
have different amounts of each type of memory.
Table 4.1 describes the memory benches amount
and page allocation for each sales type.
The addressing spaces are organized in pages of
256 bytes. Each page is composed by blocks of 32
bytes. Memory programming is performed one
block at a time in order to speed-up the
programming time (about 2.5 ms per block).
The whole location address is composed as
follows:
15
87
54
0
Page address
Block address address inside the block
Table 4.1 Sales Type Memory Organization
Device
Flash Memory
RAM Memory
EEPROM Memory
Amount
Pages
Amount
Page
Amount
Page(s)
ST52F510c2p6
4096 bytes
0 to 15
256 bytes
32
-
ST52F510c3p6
8192 bytes
0 to 31
256 bytes
32
-
ST52F513c2p6
3840 bytes
0 to 14
256 bytes
32
256 bytes
15
ST52F513c3p6
7936 bytes
0 to 30
256 bytes
32
256 bytes
31
ST52F514c1p6
4096 bytes
0 to 15
256 bytes
32
1024 bytes
16-19
ST52F514c3p6
4096 bytes
0 to 15
256 bytes
32
4096 bytes
16-31
legend:
c:
Y=16 pins, F=20 pins, G=28 pins, K=32/34 pin
p:
B=DIP, M=SO, T=TQFP
相关PDF资料 |
PDF描述 |
|---|---|
| ST52F514G3B6 | 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PDIP28 |
| ST52F513G3B6 | 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PDIP28 |
| ST52F513Y1B6 | 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PDIP16 |
| ST52F513Y2B6 | 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PDIP16 |
| ST52F510Y3B6 | 8-BIT, FLASH, 24 MHz, MICROCONTROLLER, PDIP16 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST52F510GMB6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-BIT INTELLIGENT CONTROLLER UNIT ICU Two Timer/PWMs, ADC, I2C, SPI, SCI |
| ST52F510GMM6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-BIT INTELLIGENT CONTROLLER UNIT ICU Two Timer/PWMs, ADC, I2C, SPI, SCI |
| ST52F510YMM6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-BIT INTELLIGENT CONTROLLER UNIT ICU Two Timer/PWMs, ADC, I2C, SPI, SCI |
| ST52F513 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-BIT INTELLIGENT CONTROLLER UNIT ICU Two Timer/PWMs, ADC, I2C, SPI, SCI |
| ST52F513FMB6 | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:8-BIT INTELLIGENT CONTROLLER UNIT ICU Two Timer/PWMs, ADC, I2C, SPI, SCI |
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