参数资料
型号: ST62T08CB1
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, OTPROM, 8 MHz, MICROCONTROLLER, PDIP20
封装: 0.300 INCH, PLASTIC, DIP-20
文件页数: 80/104页
文件大小: 1487K
代理商: ST62T08CB1
ST6208C/ST6209C/ST6210C/ST6220C
77/104
10.7 EMC CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
10.7.1 Functional EMS
(Electro Magnetic Susceptibility)
Based on a simple running application on the
product (toggling 2 LEDs through I/O ports), the
product is stressed by two electro magnetic events
until a failure occurs (indicated by the LEDs).
s
ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
s
FTB: A Burst of Fast Transient voltage (positive
and negative) is applied to VDD and VSS through
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
A device reset allows normal operations to be re-
sumed.
Notes:
1. Data based on characterization results, not tested in production.
2. The suggested 10 F and 0.1 F decoupling capacitors on the power supply lines are proposed as a good price vs.
EMC performance tradeoff. They have to be put as close as possible to the device power supply pins. Other EMC rec-
ommendations are given in other sections (I/Os, RESET, OSCx pin characteristics).
Figure 56. EMC Recommended Star Network Power Supply Connection 2)
Symbol
Parameter
Conditions
Neg 1)
Pos 1)
Unit
VFESD
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
VDD=5V, TA=+25°C, fOSC=8MHz
conforms to IEC 1000-4-2
-2
2
kV
VFFTB
Fast transient voltage burst limits to be ap-
plied through 100pF on VDD and VDD pins
to induce a functional disturbance
VDD=5V, TA=+25°C, fOSC=8MHz
conforms to IEC 1000-4-4
-2.5
3
VDD
VSS
0.1 F
10 F
VDD
ST62XX
POWER
SUPPLY
SOURCE
ST6
DIGITAL NOISE
FILTERING
(close to the MCU)
1
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