参数资料
型号: ST72F324BJ2T5
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 8 MHz, MICROCONTROLLER, PQFP44
封装: 10 X 10 MM, LQFP-44
文件页数: 32/167页
文件大小: 2651K
代理商: ST72F324BJ2T5
ST72323 ST72323L
Electrical characteristics
11.7.2
Electromagnetic interference (EMI)
Based on a simple application running on the product (toggling 2 LEDs through the I/O
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.
11.7.3
Absolute maximum ratings (electrical sensitivity)
Based on two different tests (ESD and LU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity. .
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). Two models
can be simulated: Human Body Model and Machine Model. This test conforms to the
JESD22-A114A/A115A standard. For more details, refer to the application note AN1181.
Table 75.
EMI emissions(1)
1.
Data based on characterization results, not tested in production.
Symbol Parameter
Conditions
Device/
package(2)
2.
Refer to Application Note AN1709 for data on other package types.
Monitored
frequency band
Max vs.
[fOSC/fCPU]
Unit
8/4 MHz 16/8 MHz
SEMI
Peak level
VDD = 5V,
TA = +25 °C
conforming to
SAE J 1752/3
LQFP44
0.1 MHz to 30 MHz
16
21
dBV
30 MHz to 130 MHz
24
29
130MHz to 1GHz
14
21
SAE EMI level
3.0
3.5
-
LQFP32
0.1 MHz to 30 MHz
12
15
dBV
30 MHz to 130 MHz
23
26
130MHz to 1GHz
15
20
SAE EMI level
3.0
3.5
-
Table 76.
ESD absolute maximum ratings
Symbol
Ratings
Conditions
Maximum
value(1)
1.
Data based on characterization results, not tested in production.
Unit
VESD(HBM)
Electrostatic discharge voltage
(human body model)
TA = +25 °C
2000
V
VESD(MM)
Electrostatic discharge voltage
(machine model)
TA = +25 °C
200
VESD(CD)
Electrostatic discharge voltage
(charged device model)
TA = +25 °C
500
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