参数资料
型号: ST730C16L2L
元件分类: 晶闸管
英文描述: 2000 A, 1600 V, SCR, TO-200AC
封装: METAL, BPUK-4
文件页数: 3/8页
文件大小: 82K
代理商: ST730C16L2L
ST730C..L Series
3
www.irf.com
Bulletin I25191 rev. D 04/03
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
Max. peak reverse and off-state
I
RRM
leakage current
Blocking
500
V/
sT
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST730C..L
Units Conditions
80
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
2.0
T
J
= T
J
max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
T
J
= - 40°C
mA
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
VT
J
= 25°C
T
J
= 125°C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST730C..L
Units Conditions
20
5.0
Triggering
TYP.
MAX.
200
-
100
200
50
-
2.5
-
1.8
3.0
1.1
-
V
GD
DC gate voltage not to trigger
0.25
V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
= T
J
max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
V
T
J
= T
J
max, t
p
5ms
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJ-hs
Max. thermal resistance,
0.073
DC operation single side cooled
junction to heatsink
0.031
DC operation double side cooled
R
thC-hs
Max. thermal resistance,
0.011
DC operation single side cooled
case to heatsink
0.006
DC operation double side cooled
F
Mounting force, ± 10%
14700
N
(1500)
(Kg)
wt
Approximate weight
255
g
Parameter
ST730C..L
Units
Conditions
K/W
°C
Case style
TO - 200AC (B-PUK)
See Outline Table
K/W
Thermal and Mechanical Specification
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