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参数资料
| 型号： | ST733C08LHP3P |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 晶闸管 |
| 英文描述： | 1900 A, 800 V, SCR, TO-200AC |
| 封装： | ROHS COMPLIANT, CERAMIC, B-PUK-2 |
| 文件页数： | 7/9页 |
| 文件大小： | 246K |
| 代理商： | ST733C08LHP3P |
Document Number: 94378
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 11-Aug-08
7
ST733CLPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 940 A
Vishay High Power Products
Fig. 15 - Frequency Characteristics
Fig. 16 - Maximum On-State Energy Power Loss Characteristics
Fig. 17 - Gate Characteristics
1E2
1E3
1E4
1E5
1E1
1E2
1E3
1E4
50Hz
400
2500
100
1000
1500
200
Pulse Basewidth(s)
5000
Snubber circuit
R =10 ohms
C =0.47F
V =80%V
s
D
DRM
ST733C..L Series
Trapezoidal pulse
T =40°C
di/ dt=100A/s
C
500
2000
3000
1E1
1E2
1E3
1E4
50Hz
400
2500
100
1000
1500
200
Pulse Basewidth(s)
Snubber circuit
R =10 ohms
C =0.47F
V =80%V
3000
s
D
DRM
ST733C..LSeries
Trapezoidal pulse
T =55°C
di/ dt=100A/s
C
tp
500
2000
1E1
1E2
1E3
1E4
1E5
1E1
1E2
1E3
1E4
Pulse Basewidth (s)
20 joules per p ulse
2
1
0.5
10
5
P
e
a
k
O
n
-s
ta
te
Cu
rr
e
n
t
(A
)
3
ST733C..L Series
Sinusoid al p ulse
0.4
0.3
tp
1E1
1E2
1E3
1E4
Pulse Basew idth (s)
20 joules p er pulse
2
1
0.5
10
5
0.4
0.3
ST733C..L Series
Rec ta ngula r pulse
di/ dt = 50A/ s
tp
3
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
(1)
(2)
(3)
InstantaneousGate Current (A)
a) Recommended loadline for
b) Recommended load line for
<=30% rateddi/ dt :10V, 10ohms
Frequency Limitedby PG(AV)
rated di/ dt :20V, 10ohms; tr<=1s
tr<=1 s
Device:ST733C..L Series
(1) PGM=10W, tp =20ms
(2) PGM=20W, tp =10ms
(3) PGM=40W, tp =5ms
(4) PGM=60W, tp =3.3ms
Rectangular gate pulse
(4)
Tj=125
°C
Tj=25
°C
Tj=40
°C
In
s
tan
ta
ne
o
u
sG
a
te
V
olt
ag
e
(V
)
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