参数资料
型号: ST7FLITES2Y0B6
厂商: STMICROELECTRONICS
元件分类: 微控制器/微处理器
英文描述: 8-BIT, FLASH, 16 MHz, MICROCONTROLLER, PDIP16
封装: 0.300 INCH, PLASTIC, DIP-16
文件页数: 117/124页
文件大小: 2155K
代理商: ST7FLITES2Y0B6
ST7LITE0xY0, ST7LITESxY0
92/124
13.6 MEMORY CHARACTERISTICS
TA = -40°C to 105°C, unless otherwise specified
13.6.1 RAM and Hardware Registers
13.6.2 FLASH Program Memory
13.6.3 EEPROM Data Memory
Notes:
1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Up to 32 bytes can be programmed at a time.
3. The data retention time increases when the TA decreases.
4. Data based on reliability test results and monitored in production.
5. Data based on characterization results, not tested in production.
6. Guaranteed by Design. Not tested in production.
7. Design target value pending full product characterization.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode 1)
HALT mode (or RESET)
1.6
V
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for Flash write/erase
2.4
5.5
V
tprog
Programming time for 1~32 bytes 2)
TA=40 to +105°C
5
10
ms
Programming time for 1.5 kBytes
TA=+25°C
0.24
0.48
s
tRET
Data retention 4)
TA=+55°C
3)
20
years
NRW
Write erase cycles
TA=+25°C
10K 7)
cycles
IDD
Supply current
Read / Write / Erase
modes
fCPU = 8MHz, VDD = 5.5V
2.6 6)
mA
No Read/No Write Mode
100
A
Power down mode / HALT
0
0.1
A
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDD
Operating voltage for EEPROM
write/erase
2.4
5.5
V
tprog
Programming time for 1~32 bytes
TA=40 to +105°C
5
10
ms
tret
Data retention 4)
TA=+55°C
3)
20
years
NRW
Write erase cycles
TA=+25°C
300K 7)
cycles
1
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