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参数资料
| 型号： | ST93003 |
| 厂商： | 意法半导体 |
| 英文描述： | HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR |
| 中文描述： | 高压快速开关PNP功率晶体管 |
| 文件页数： | 2/7页 |
| 文件大小： | 254K |
| 代理商： | ST93003 |
THERMAL DATA
Rthj-case
Rthj-amb
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
3.12
89
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
VCE = -500V
Tj = 125
oC
-1
-5
mA
V(BR)EBO
Emitter Base
Breakdown Voltage
(IC = 0)
IE = -10 mA
-5
-10
V
VCEO(sus)
Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = -10 mA
L = 25 mH
-400
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = -0.5 A
IB = -0.1 A
IC = -0.35 A
IB = -50 mA
-0.5
V
VBE(sat)
Base-Emitter
Saturation Voltage
IC = -0.5 A
IB = -0.1 A
-1
V
hFE
DC Current Gain
IC = -10 mA
VCE = -5 V
IC = -0.35 A
VCE = -5 V
IC = -1 A
VCE = -5 V
10
16
4
25
32
tr
ts
tf
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
IC = -0.35 A
VCC = 125 V
IB1 = -70 mA
IB2 = 70 mA
Tp
≥ 25 s
(see Figure 2)
1.5
90
2.2
0.1
2.9
ns
s
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = -0.5 A
IB1 = -0.1 A
VBE(off) = 5 V
L = 10 mH
Vclamp = 300 V
(see Figure 1)
400
40
ns
Esb
Avalanche Energy
L = 4 mH
C = 1.8 nF
IBR
≤ 2.5 A
25
oC < TC < 125oC
12
mJ
Pulsed: Pulse duration = 300s, duty cycle = 1.5 %
ST93003
2/7
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