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参数资料
| 型号： | ST93C46C |
| 厂商： | 意法半导体 |
| 英文描述： | 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| 中文描述： | 每1000 64 x 16或128 × 8 MICROWIRE的串行EEPROM的 |
| 文件页数： | 5/13页 |
| 文件大小： | 111K |
| 代理商： | ST93C46C |
Figure5. Synchronous Timing,Read or Write
AI00820C
C
D
Q
ADDRESS INPUT
Hi-Z
tDVCH
tCLSL
A0
S
DATA OUTPUT
tCHQV
tCHDX
tCHQL
An
tSLSH
tSLQZ
Q15/Q7
Q0
AI01429
C
D
Q
ADDRESS/DATA INPUT
Hi-Z
tDVCH
tSLCH
A0/D0
S
WRITE CYCLE
tSLSH
tCHDX
An
tCLSL
tSLQZ
BUSY
tSHQV
tW
READY
counter automatically rolls over to ’00’ when the
highest addressis reached.
Programming is internally self-timed (the external
clocksignal on C input may be disconnectedor left
running after the start of a Write cycle) and does
notrequirean erasecycleprior to theWrite instruc-
tion. The Write instructionwrites 8or 16 bitsat one
time into one of the 128 bytes or 64 words. After
the start of the programming cycle a Busy/Ready
signal is available on the Data output (Q) when
Chip Select (S) is High.
An internal feature of the ST93C46 provides
Power-on Data Protection by inhibitingany opera-
tion when the Supplyis too low. The design of the
ST93C46and theHighEnduranceCMOS technol-
ogy used for its fabrication give an Erase/Write
cycle Endurance of 1,000,000 cycles and a data
retention of 40 years.
The DU(Don’tUse) pindoesnotaffectthefunction
of the memory and it is reserved for use by SGS-
THOMSONduringtestsequences.The pinmay be
left unconnectedor may be connected to V
CC
or
V
SS
. Direct connection of DU to V
SS
is recom-
mended for the lowest standby power consump-
tion.
DESCRIPTION
(cont’d)
5/13
ST93C46A/46C/46T, ST93C47C/47T
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