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参数资料
| 型号： | ST93C47C |
| 厂商： | 意法半导体 |
| 英文描述： | MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-12V; Continuous Drain Current, Id:-4.5A; On-Resistance, Rds(on):0.04ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-TSOP; Leaded Process Compatible:No |
| 中文描述： | 每1000 64 x 16或128 × 8 MICROWIRE的串行EEPROM的 |
| 文件页数： | 1/13页 |
| 文件大小： | 111K |
| 代理商： | ST93C47C |
ST93C46A,46C,46T
ST93C47C,47T
1K (64 x 16 or 128 x 8) SERIALMICROWIRE EEPROM
NOT FOR NEW DESIGN
June 1997
1/13
This is information on a product still in production butnot recommendedfor new designs.
AI00871C
D
VCC
ST93C46
ST93C47
VSS
C
Q
S
ORG
Figure 1. Logic Diagram
1 MILLION ERASE/WRITE CYCLES, with
40 YEARSDATARETENTION
DUAL ORGANIZATION:64 x 16 or 128 x 8
BYTE/WORDand ENTIRE MEMORY
PROGRAMMING INSTRUCTIONS
SELF-TIMED PROGRAMMINGCYCLEwith
AUTO-ERASE
READY/BUSYSIGNALDURING
PROGRAMMING
SINGLE SUPPLYVOLTAGE:
– 4.5V to 5.5V for ST93C46version
– 3V to 5.5V for ST93C47 version
SEQUENTIALREAD OPERATION
5ms TYPICALPROGRAMMING TIME
ENHANCED ESD/LATCH UP
PERFORMANCE for ”C” VERSION
ST93C46A,ST93C46C,ST93C46T,
ST93C47C,ST93C47T are replacedby the
M93C46
DESCRIPTION
This specification covers a range of 1K bit serial
EEPROM products, the ST93C46A,46C,46T
specified at 5V
±
10% and the ST93C47C,47T
specifiedat 3V to 5.5V.
In the text, products are referred to as ST93C46.
The ST93C46 is a 1K bit Electrically Erasable
ProgrammableMemory(EEPROM)fabricatedwith
SGS-THOMSON’sHighEnduranceSinglePolysili-
con CMOS technology. The memory is accessed
through a serial input (D) and output (Q).
S
Chip Select Input
D
Serial Data Input
Q
Serial Data Output
C
Serial Clock
ORG
Organisation Select
V
CC
Supply Voltage
V
SS
Ground
Table 1. Signal Names
8
1
SO8 (M)
150mil Width
8
1
PSDIP8 (B)
0.4mm Frame
相关PDF资料 |
PDF描述 |
|---|---|
| ST93C47CM1013TR | MOSFET, P TSOP-6MOSFET, P TSOP-6; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:12V; Case style:TSOP-6; Current, Id cont:4.5A; Current, Idm pulse:20A; Power, Pd:1.1W; Resistance, Rds on:0.04R; SMD:1; Charge, Qrr typ |
| ST93C47CM3013TR | MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.4A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:6-TSOP; Leaded Process Compatible:No |
| ST93C47CM6013TR | MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:3.4A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Package/Case:6-TSOP RoHS Compliant: Yes |
| ST93C47T | MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-2.7A; On-Resistance, Rds(on):0.17ohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:6-TSOP; Leaded Process Compatible:No |
| ST93C47CM3TR | 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ST93C47CB1 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Microwire Serial EEPROM |
| ST93C47CB1013TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| ST93C47CB1TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
| ST93C47CB3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Microwire Serial EEPROM |
| ST93C47CB3013TR | 制造商:STMICROELECTRONICS 制造商全称:STMicroelectronics 功能描述:1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM |
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