参数资料
型号: ST93C47TM3TR
厂商: 意法半导体
英文描述: 1K 64 x 16 or 128 x 8 SERIAL MICROWIRE EEPROM
中文描述: 每1000 64 x 16或128 × 8 MICROWIRE的串行EEPROM的
文件页数: 3/13页
文件大小: 111K
代理商: ST93C47TM3TR
Input Rise and Fall Times
20ns
Input Pulse Voltages
0.4V to 2.4V
Input Timing Reference Voltages
1V to 2.0V
Output Timing Reference Voltages
0.8V to 2.0V
AC MEASUREMENT CONDITIONS
Note that Output Hi-Z is defined as the point where data
is no longer driven.
AI00815
2.4V
0.4V
2.0V
0.8V
2V
1V
INPUT
OUTPUT
Figure 3. ACTesting InputOutput Waveforms
Symbol
Parameter
Test Condition
Min
Max
Unit
C
IN
Input Capacitance
V
IN
= 0V
5
pF
C
OUT
Output Capacitance
V
OUT
= 0V
5
pF
Note:
1. Sampled only, not 100% tested.
Table 3. Capacitance
(1)
(T
A
= 25
°
C, f = 1 MHz)
Symbol
Parameter
TestCondition
Min
Max
Unit
I
LI
Input Leakage Current
0V
V
IN
V
CC
±
2.5
μ
A
I
LO
Output LeakageCurrent
0V
V
OUT
V
CC
,
Q inHi-Z
±
2.5
μ
A
I
CC
Supply Current (TTL Inputs)
S = V
IH
, f = 1 MHz
3
mA
Supply Current (CMOS Inputs)
S = V
IH
, f = 1 MHz
2
mA
I
CC1
Supply Current (Standby)
S = V
SS
, C = V
SS
,
ORG = V
SS
or V
CC
50
μ
A
V
IL
Input Low Voltage (D, C, S)
V
CC
= 5V
±
10%
–0.3
0.8
V
3V
V
CC
4.5V
–0.3
0.2 V
CC
V
V
IH
Input High Voltage (D, C, S)
V
CC
= 5V
±
10%
2
V
CC
+ 1
V
3V
V
CC
4.5V
0.8 V
CC
V
CC
+ 1
V
V
OL
Output Low Voltage
I
OL
= 2.1mA
0.4
V
I
OL
= 10
μ
A
0.2
V
V
OH
Output High Voltage
I
OH
= –400
μ
A
2.4
V
I
OH
= –10
μ
A
V
CC
–0.2
V
Table 4. DC Characteristics
(T
A
= 0 to70
°
C or –40 to 85
°
C; V
CC
= 4.5V to 5.5Vor 3V to 5.5V)
3/13
ST93C46A/46C/46T, ST93C47C/47T
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